Electrical properties and interfacial chemical environments...

Microelectronic Engineering 2011 Vol. 88; Iss. 4

Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs

Y.H. Chang, M.L. Huang, P. Chang, C.A. Lin, Y.J. Chu, B.R. Chen, C.L. Hsu, J. Kwo, T.W. Pi, M. Hong
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.09.015
File:
PDF, 1000 KB
english, 2011
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