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The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates
M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, J. Fontaine, C. gaquiere, H. MaarefVolume:
88
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2010.09.027
File:
PDF, 312 KB
english, 2011