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Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides
A. Bravaix, D. Goguenheim, N. Revil, E. VincentVolume:
44
Year:
2004
Language:
english
Pages:
13
DOI:
10.1016/j.microrel.2003.10.002
File:
PDF, 467 KB
english, 2004