Organic thin film transistors with HfO2 high-k gate...

Microelectronics Reliability 2007 Vol. 47; Iss. 2-3

Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

J. Tardy, M. Erouel, A.L. Deman, A. Gagnaire, V. Teodorescu, M.G. Blanchin, B. Canut, A. Barau, M. Zaharescu
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Volume:
47
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2006.01.012
File:
PDF, 363 KB
english, 2007
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