Degradation induced by 2-MeV alpha particles on AlGaN/GaN...

Microelectronics Reliability 2006 Vol. 46; Iss. 9-11

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors

Francesca Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Paccagnella
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Volume:
46
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.microrel.2006.07.066
File:
PDF, 418 KB
english, 2006
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