Volume 46; Issue 9-11

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Microelectronics Reliability
Volume 46; Issue 9-11

Microelectronics Reliability

Volume 46; Issue 9-11

1

Editorial

L.J. Balk, W.H. Gerling, E. Wolfgang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 250 KB

english, 2006

2

Electrical steering of vehicles - fault-tolerant analysis and design

Mogens Blanke, Jesper Sandberg Thomsen

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1020 KB

english, 2006

3

ATPG scan logic failure analysis: a case study of logic ICs – fault isolation, defect mechanism identification and yield improvement

Liming Gao, Christian Burmer, Frank Siegelin

Journal:

Microelectronics Reliability

Year:

2006

File:

PDF, 3.95 MB

2006

4

Multiscale modelling of multilayer substrates

R.L.J.M. Ubachs, O. van der Sluis, W.D. van Driel, G.Q. Zhang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.20 MB

english, 2006

5

Physical-to-Logical Mapping of Emission Data using Place-and-Route

R.A. Nicholson, H. Suri

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 420 KB

english, 2006

6

Evaluation of scanning capacitance microscopy sample preparation by focused ion beam

N. Rodriguez, J. Adrian, C. Grosjean, G. Haller, C. Girardeaux, A. Portavoce

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.24 MB

english, 2006

7

Localization and physical analysis of a complex SRAM failure in 90nm technology

Zhongling Qian, Frank Siegelin, Birgit Tippelt, Stefan Müller

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.08 MB

english, 2006

8

Application of various optical techniques for ESD defect localization

F. Essely, F. Darracq, V. Pouget, M. Remmach, F. Beaudoin, N. Guitard, M. Bafleur, P. Perdu, A. Touboul, D. Lewis

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 702 KB

english, 2006

9

Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards

C. DeNardi, R. Desplats, P. Perdu, J-L. Gauffier, C. Guérin

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 9.54 MB

english, 2006

10

Fault diagnosis technology based on transistor behavior analysis for physical analysis

M. Sanada, Y. Yoshizawa

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.57 MB

english, 2006

11

Failure analyses for debug and ramp-up of modern IC’s

Christian Burmer, Siegfried Görlich

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.24 MB

english, 2006

12

Lock-in thermal IR imaging using a solid immersion lens

O. Breitenstein, F. Altmann, T. Riediger, D. Karg, V. Gottschalk

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 8.16 MB

english, 2006

13

Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation

A. Douin, V. Pouget, M. De Matos, D. Lewis, P. Perdu, P. Fouillat

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.17 MB

english, 2006

14

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lepinay, C. Wyon

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.58 MB

english, 2006

15

A new high-voltage tolerant I/O for improving ESD robustness

J.T. Jang, Y.C. Kim, W.H. Bong, E.K. Kwon, B.J. Kwon, J.S. Jeon, H.G. Kim, I.H. Son

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 291 KB

english, 2006

16

Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect

Arijit Roy, Cher Ming Tan

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 428 KB

english, 2006

17

Electromigration failure distributions of dual damascene Cu /low – k interconnects

A.S. Oates, S.C. Lee

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 3.48 MB

english, 2006

18

Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up

M. Heer, V. Dubec, S. Bychikhin, D. Pogany, E. Gornik, M. Frank, A. Konrad, J. Schulz

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 616 KB

english, 2006

19

High power reliability aspects on RF MEMS varactor design

C. Palego, A. Pothier, A. Crunteanu, P. Blondy

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.65 MB

english, 2006

20

High brightness GaN LEDs degradation during dc and pulsed stress

M. Meneghini, S. Podda, A. Morelli, R. Pintus, L. Trevisanello, G. Meneghesso, M. Vanzi, E. Zanoni

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.79 MB

english, 2006

21

Novel ESD strategy for high voltage non-volatile programming pin application

Kyoung-Sik Im, Jae-Hyok Ko, Suk-Jin Kim, Chan-Hee Jeon, Chang-Su Kim, Ki-Tae Lee, Han-Gu Kim, Il-Hun Son

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 544 KB

english, 2006

22

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress

S. Gerardin, A. Griffoni, A. Cester, A. Paccagnella, G. Ghidini

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

23

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling

L. Dupont, Z. Khatir, S. Lefebvre, S. Bontemps

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 3.09 MB

english, 2006

24

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

D. Barlini, M. Ciappa, A. Castellazzi, M. Mermet-Guyennet, W. Fichtner

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 368 KB

english, 2006

25

Investigation of MOSFET failure in soft-switching conditions

F. Iannuzzo, G. Busatto, C. Abbate

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 23.87 MB

english, 2006

26

Kelvin probe force microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

W. Bergbauer, T. Lutz, W. Frammelsberger, G. Benstetter

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.13 MB

english, 2006

27

Gamma radiation effects on RF MEMS capacitive switches

A. Crunteanu, A. Pothier, P. Blondy, F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, P. Tristant, O. Vendier, C. Drevon, J.L. Cazaux, L. Marchand

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.28 MB

english, 2006

28

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors

Francesca Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Paccagnella

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 418 KB

english, 2006

29

New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors

In Kyung Lee, Se Re Na Yun, Kyo Sun Kim, Chong Gun Yu, Jong Tae Park

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 387 KB

english, 2006

30

Dynamic voltage stress effects on nMOS varactor

Chuanzhao Yu, J.S. Yuan, Enjun Xiao

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 382 KB

english, 2006

31

Device level electrical-thermal-stress coupled-field modeling

Guang Yu Huang, Cher Ming Tan

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 374 KB

english, 2006

32

NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs

D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, N. Stojadinović

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 10.91 MB

english, 2006

33

Study of performance degradations in DC-DC converter due to hot carrier stress by simulation

C. Yu, L. Jiang, J.S. Yuan

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 584 KB

english, 2006

34

Characterisation of IC packaging interfaces and loading effects

H.C. Yeo, N. Guo, H. Du, W.M. Huang, X.M. Jian

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 712 KB

english, 2006

35

Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition

S.Y. Yang, W.J. Lee, S.H. Jeong, S.J. Lee

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.84 MB

english, 2006

36

Reliability of high temperature solder alternatives

F.P. McCluskey, M. Dash, Z. Wang, D. Huff

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.88 MB

english, 2006

37

Electromigration lifetimes and void growth at low cumulative failure probability

Hideaki Tsuchiya, Shinji Yokogawa

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 954 KB

english, 2006

38

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

C. Salm, A.J. Hof, F.G. Kuper, J. Schmitz

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 637 KB

english, 2006

39

Progress in reliability research in the micro and nano region

B. Wunderle, B. Michel

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.08 MB

english, 2006

40

Prospects on Mn-doped ZnGeP2 for spintronics

A.V. Krivosheeva, V.L. Shaposhnikov, V.V. Lyskouski, V.E. Borisenko, F. Arnaud d’Avitaya, J.-L. Lazzari

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 251 KB

english, 2006

41

Reliability estimation of aeronautic component by accelerated tests

S. Charruau, F. Guerin, J. Hernández Dominguez, J. Berthon

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.54 MB

english, 2006

42

Electro-thermal short pulsed simulation for SOI technology

Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azais, Pascal Nouet

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.79 MB

english, 2006

43

Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node

R. Schlangen, P. Sadewater, U. Kerst, C. Boit

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 10.33 MB

english, 2006

44

Time gating imaging through thick silicon substrate: a new step towards backside characterisation

J.M. Rampnoux, H. Michel, M.A. Salhi, S. Grauby, W. Claeys, S. Dilhaire

Journal:

Microelectronics Reliability

Year:

2006

File:

PDF, 3.39 MB

2006

45

Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity

A. Altes, R. Tilgner, W. Walter

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 641 KB

english, 2006

46

Development of highly accelerated electromigration test

Cher Ming Tan, Wei Li, Kok Tong Tan, Frankie Low

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.59 MB

english, 2006

47

ESD protection structure qualification – a new approach for release for automotive applications

M. Goroll, W. Kanert, R. Pufall

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 355 KB

english, 2006

48

ESD Susceptibility of Submicron Air Gaps

Heinrich Wolf, Horst Gieser, Detlef Bonfert, Markus Hauser

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 991 KB

english, 2006

49

Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant

D. Alvarez, M.J. Abou-Khalil, C. Russ, K. Chatty, R. Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.21 MB

english, 2006

50

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

51

Charging of radiation induced defects in RF MEMS dielectric films

M. Exarchos, E. Papandreou, P. Pons, M. Lamhamdi, G.J. Papaioannou, R. Plana

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 825 KB

english, 2006

52

Charging-Effects in RF capacitive switches influence of insulating layers composition

M. Lamhamdi, J. Guastavino, L. Boudou, Y. Segui, P. Pons, L. Bouscayrol, R. Plana

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 523 KB

english, 2006

53

Reliability and wearout characterisation of LEDs

P. Jacob, A. Kunz, G. Nicoletti

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.71 MB

english, 2006

54

Strong electron irradiation hardness of 852 nm Al-free laser diodes

M. Boutillier, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, O. Gilard

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 518 KB

english, 2006

55

Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications

A. Castellazzi, M. Ciappa, W. Fichtner, G. Lourdel, M. Mermet-Guyennet

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.06 MB

english, 2006

56

Thermal characterization and modeling of power hybrid converters for distributed power systems

P. Cova, N. Delmonte, R. Menozzi

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 7.56 MB

english, 2006

57

Failure mechanism of trench IGBT under short-circuit after turn-off

A. Benmansour, S. Azzopardi, J.C. Martin, E. Woirgard

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.51 MB

english, 2006

58

Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode

A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, L. Merlin

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.10 MB

english, 2006

59

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 759 KB

english, 2006

60

The high frequency behaviour of high voltage and current IGBT modules

C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

61

Hot-carrier degradation analysis based on ring oscillators

Jingchao Wang, Edgar Olthof, Wim Metselaar

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 788 KB

english, 2006

62

Hot carrier reliability of RF N- LDMOS for S Band radar application

M. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M.A. Belaid, K. Mourgues, C. Tolant, P. Eudeline

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 489 KB

english, 2006

63

Improved physical understanding of intermittent failure in continuous monitoring method

W.C. Maia Filho, M. Brizoux, H. Frémont, Y. Danto

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 659 KB

english, 2006

64

Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps

Toru Miyazaki, Tomoya Omata

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.60 MB

english, 2006

65

Transient-induced latch-up test setup for wafer-level and package-level

D. Bonfert, H. Gieser, H. Wolf, M. Frank, A. Konrad, J. Schulz

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.59 MB

english, 2006

66

The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

J.R. Lloyd, C.E. Murray, S. Ponoth, S. Cohen, E. Liniger

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 452 KB

english, 2006

67

Contents - take from IPS

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 39 KB

english, 2006

68

author index - authors from this issue only

Journal:

Microelectronics Reliability

Year:

2006

File:

PDF, 53 KB

2006

69

Part average analysis – A tool for reducing failure rates in automotive electronics

M. Wagner, W. Unger, W. Wondrak

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.36 MB

english, 2006

70

Power cycling tests for accelerated ageing of ultracapacitors

O. Briat, W. Lajnef, J.-M. Vinassa, E. Woirgard

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 3.43 MB

english, 2006

71

Reliability challenges in the nanoelectronics era

A.J. van Roosmalen, G.Q. Zhang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 596 KB

english, 2006

72

Designing in reliability in advanced CMOS technologies

C.R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guerin, F. Perrier, E. Vincent, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 765 KB

english, 2006

73

Improving performance and reliability of NOR-Flash arrays by using pulsed operation

A. Chimenton, F. Irrera, P. Olivo

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 3.11 MB

english, 2006

74

Characterization of photonic devices by secondary electron potential contrast

M. Buzzo, M. Ciappa, W. Fichtner

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.60 MB

english, 2006

75

A 3D analysis technique for detecting trace metal contamination

Yasunori Goto, Tomokatsu Higuchi

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 920 KB

english, 2006

76

Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection

Radu Ispasoiu, Tom Crawford, Brian Johnston, Chris Shaw, Steven Kasapi, Jason Goertz, Olivier Rinaudo, Peter Ouimet

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 454 KB

english, 2006

77

Intrinsic bonding defects in transition metal elemental oxides

G. Lucovsky, H. Seo, L.B. Fleming, M.D. Ulrich, J. Lüning, P. Lysaght, G. Bersuker

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.90 MB

english, 2006

78

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

J.M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 517 KB

english, 2006

79

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

T. Pompl, A. Kerber, M. Röhner, M. Kerber

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

80

Post-breakdown leakage resistance and its dependence on device area

Tze Wee Chen, Choshu Ito, William Loh, Robert W. Dutton

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 301 KB

english, 2006

81

A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect

Robin C.J. Wang, C.C. Lee, L.D. Chen, Kenneth Wu, K.S. Chang-Liao

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 768 KB

english, 2006

82

Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions

C. Yuan, W.D. van Driel, R. van Silfhout, O. van der Sluis, R.A.B. Engelen, L.J. Ernst, F. van Keulen, G.Q. Zhang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 4.65 MB

english, 2006

83

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J.M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 299 KB

english, 2006

84

A new method to characterize the thermomechanical response of multilayered structures in power electronics

P. Zimprich, T. Licht, B. Weiss

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 527 KB

english, 2006

85

Experimental study of power MOSFET’s gate damage in radiation environment

G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 315 KB

english, 2006

86

Failure Analysis-assisted FMEA

G. Cassanelli, G. Mura, F. Fantini, M. Vanzi, B. Plano

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 987 KB

english, 2006

87

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

M.A. Belaïd, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.64 MB

english, 2006

88

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current

X. Perpiñà, J.F. Serviere, J. Saiz, D. Barlini, M. Mermet-Guyennet, J. Millán

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.55 MB

english, 2006

89

Initial stage of silver electrochemical migration degradation

S. Yang, J. Wu, A. Christou

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 1.71 MB

english, 2006

90

Use of signal processing imaging for the study of a 3D package in harsh environment

Jean Augereau, Yves Ousten, Bruno Levrier, Laurent Bechou

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 829 KB

english, 2006

91

Defect detection in multilayer ceramic capacitors

V. Krieger, W. Wondrak, A. Dehbi, W. Bartel, Y. Ousten, B. Levrier

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 19.85 MB

english, 2006

92

Pb-free high temperature solders for power device packaging

Y. Yamada, Y. Takaku, Y. Yagi, Y. Nishibe, I. Ohnuma, Y. Sutou, R. Kainuma, K. Ishida

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 989 KB

english, 2006

93

The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis

M.C. Yew, C.Y. Chou, C.S. Huang, W.K. Yang, K.N. Chiang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 896 KB

english, 2006

94

Reliability modelling for packages in flexible end-products

W.D. van Driel, O. van der Sluis, D.G. Yang, R. Ubachs, C. Zenz, G. Aflenzer, G.Q. Zhang

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 11.93 MB

english, 2006

95

A complete RF power technology assessment for military applications

C. Moreau, P. Le Helleye, D. Ruelloux

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 9.47 MB

english, 2006

96

Modern IC packaging trends and their reliability implications

R. Plieninger, M. Dittes, K. Pressel

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.64 MB

english, 2006

97

Read disturb in flash memories: reliability case

P. Tanduo, L. Cola, S. Testa, M. Menchise, A. Mervic

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 357 KB

english, 2006

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