NBTI reliability of Ni FUSI/HfSiON gates: Effect of...

Microelectronics Reliability 2007 Vol. 47; Iss. 4-5

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase

A. Shickova, B. Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. Maes, G. Groeseneken, J.A. Kittl
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Volume:
47
Year:
2007
Language:
english
Pages:
3
DOI:
10.1016/j.microrel.2007.01.046
File:
PDF, 138 KB
english, 2007
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