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Volume 47; Issue 4-5
Main
Microelectronics Reliability
Volume 47; Issue 4-5
Microelectronics Reliability
Volume 47; Issue 4-5
1
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics
S. Abermann
,
J. Efavi
,
G. Sjöblom
,
M. Lemme
,
J. Olsson
,
E. Bertagnolli
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 432 KB
Your tags:
english, 2007
2
Extracting the relative dielectric constant for “high-κ layers” from CV measurements – Errors and error propagation
O. Buiu
,
S. Hall
,
O. Engstrom
,
B. Raeissi
,
M. Lemme
,
P.K. Hurley
,
K. Cherkaoui
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 133 KB
Your tags:
english, 2007
3
Ionising radiation and electrical stress on nanocrystal memory cell array
A. Cester
,
A. Gasperin
,
N. Wrachien
,
A. Paccagnella
,
V. Ancarani
,
C. Gerardi
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 447 KB
Your tags:
english, 2007
4
An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics
Fu-Chien Chiu
,
Wen-Chieh Shih
,
Joseph Ya-min Lee
,
Huey-Liang Hwang
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 289 KB
Your tags:
english, 2007
5
Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures
K. Čičo
,
J. Kuzmík
,
D. Gregušová
,
R. Stoklas
,
T. Lalinský
,
A. Georgakilas
,
D. Pogany
,
K. Fröhlich
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 251 KB
Your tags:
english, 2007
6
Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors
Nguyen Duy Cuong
,
Dong-Jin Kim
,
Byoung-Don Kang
,
Chang Soo Kim
,
Soon-Gil Yoon
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 142 KB
Your tags:
english, 2007
7
Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices
Giuseppe Currò
,
Marco Camalleri
,
Denise Calì
,
Francesca Monforte
,
Fortunato Neri
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 148 KB
Your tags:
english, 2007
8
Reliability aspects of Hf-based capacitors: Breakdown and trapping effects
R. Duschl
,
M. Kerber
,
A. Avellan
,
S. Jakschik
,
U. Schroeder
,
S. Kudelka
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 789 KB
Your tags:
english, 2007
9
Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology
Ralf Endres
,
Yordan Stefanov
,
Udo Schwalke
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 275 KB
Your tags:
english, 2007
10
Eyring acceleration model in thick nitride/oxide dielectrics
S.B. Evseev
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 150 KB
Your tags:
english, 2007
11
Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
R.A. Farrell
,
K. Cherkaoui
,
N. Petkov
,
H. Amenitsch
,
J.D. Holmes
,
P.K. Hurley
,
M.A. Morris
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 383 KB
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english, 2007
12
Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization
P. Fiorenza
,
R. Lo Nigro
,
V. Raineri
,
S. Lombardo
,
R.G. Toro
,
G. Malandrino
,
I.L. Fragalà
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 414 KB
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english, 2007
13
Charge trapping and interface states in hydrogen annealed HfO2–Si structures
Y.V. Gomeniuk
,
A.N. Nazarov
,
Ya.N. Vovk
,
V.S. Lysenko
,
Yi Lu
,
O. Buiu
,
S. Hall
,
R.J. Potter
,
P. Chalker
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 261 KB
Your tags:
english, 2007
14
Modification of porous ultra-low K dielectric by electron-beam curing
C. Guedj
,
G. Imbert
,
E. Martinez
,
C. Licitra
,
N. Rochat
,
V. Arnal
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 852 KB
Your tags:
english, 2007
15
Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications
Hsin-hao Hsu
,
Joseph Ya-min Lee
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 268 KB
Your tags:
english, 2007
16
Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications
Maurice Kahn
,
Christophe Vallée
,
Emmanuel Defay
,
Catherine Dubourdieu
,
Marceline Bonvalot
,
Serge Blonkowski
,
Jean-Raoul Plaussu
,
Pierre Garrec
,
Thierry Baron
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 206 KB
Your tags:
english, 2007
17
Reliability screening of high-k dielectrics based on voltage ramp stress
A. Kerber
,
L. Pantisano
,
A. Veloso
,
G. Groeseneken
,
M. Kerber
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 638 KB
Your tags:
english, 2007
18
Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies
Giuseppe La Rosa
,
Stewart E. Rauch III
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 496 KB
Your tags:
english, 2007
19
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
M. Lemberger
,
A. Baunemann
,
A.J. Bauer
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 578 KB
Your tags:
english, 2007
20
Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization
C. Leyris
,
F. Martinez
,
M. Valenza
,
A. Hoffmann
,
J.C. Vildeuil
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 211 KB
Your tags:
english, 2007
21
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
J. Martín-Martínez
,
R. Rodríguez
,
M. Nafría
,
X. Aymerich
,
J.H. Stathis
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 160 KB
Your tags:
english, 2007
22
Epitaxial growth of LaAlO3 on Si(0 0 1) using interface engineering
C. Merckling
,
G. Delhaye
,
M. El-Kazzi
,
S. Gaillard
,
Y. Rozier
,
L. Rapenne
,
B. Chenevier
,
O. Marty
,
G. Saint-Girons
,
M. Gendry
,
Y. Robach
,
G. Hollinger
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 360 KB
Your tags:
english, 2007
23
LOCOS induced stress effects on SOI bipolar devices
S. Privitera
,
R. Modica
,
V. Cerantonio
,
G. Fallica
,
G. Pappalardo
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 251 KB
Your tags:
english, 2007
24
Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors
A. Rothschild
,
R. Mitsuhashi
,
C. Kerner
,
X. Shi
,
J.L. Everaert
,
L. Date
,
T. Conard
,
O. Richard
,
C. Vrancken
,
R. Verbeeck
,
A. Veloso
,
A. Lauwers
,
M. De Potter
,
I. Debusschere
,
M. Jurczak
,
M. Niwa
,
P. A
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 248 KB
Your tags:
english, 2007
25
Low-frequency noise in hot-carrier degraded nMOSFETs
Cora Salm
,
Eric Hoekstra
,
Jay S. Kolhatkar
,
André J. Hof
,
Hans Wallinga
,
Jurriaan Schmitz
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 456 KB
Your tags:
english, 2007
26
High-K dielectrics for inter-poly application in non volatile memories
A. Sebastiani
,
R. Piagge
,
A. Modelli
,
G. Ghidini
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 482 KB
Your tags:
english, 2007
27
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase
A. Shickova
,
B. Kaczer
,
A. Veloso
,
M. Aoulaiche
,
M. Houssa
,
H. Maes
,
G. Groeseneken
,
J.A. Kittl
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 138 KB
Your tags:
english, 2007
28
Silicon nanocrystal non-volatile memory for embedded memory scaling
R.F. Steimle
,
R. Muralidhar
,
R. Rao
,
M. Sadd
,
C.T. Swift
,
J. Yater
,
B. Hradsky
,
S. Straub
,
H. Gasquet
,
L. Vishnubhotla
,
E.J. Prinz
,
T. Merchant
,
B. Acred
,
K. Chang
,
B.E. White Jr.
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 646 KB
Your tags:
english, 2007
29
Ferroelectric characteristic of group IV elements added SrBi2Ta2O9 thin films
Susumu Tamura
,
Yasuhisa Omura
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 156 KB
Your tags:
english, 2007
30
Experimental study of carrier transport in multi-layered structures
Guoqiao Tao
,
Cedric Ouvrard
,
Helene Chauveau
,
Som Nath
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 246 KB
Your tags:
english, 2007
31
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition
Y. Lu
,
O. Buiu
,
S. Hall
,
I.Z. Mitrovic
,
W. Davey
,
R.J. Potter
,
P.R. Chalker
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 303 KB
Your tags:
english, 2007
32
Electrical characterization and analysis techniques for the high-κ era
Chadwin D. Young
,
Dawei Heh
,
Arnost Neugroschel
,
Rino Choi
,
Byoung Hun Lee
,
Gennadi Bersuker
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 534 KB
Your tags:
english, 2007
33
The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers
Liliana Caristia
,
Giuseppe Nicotra
,
Corrado Bongiorno
,
Nicola Costa
,
Sebastiano Ravesi
,
Salvo Coffa
,
Riccardo De Bastiani
,
Maria Grazia Grimaldi
,
Corrado Spinella
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 150 KB
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english, 2007
34
Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects
O. Cueto
,
M. Assous
,
F. de Crécy
,
A. Toffoli
,
D. Bouchu
,
M. Fayolle
,
F. Boulanger
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 380 KB
Your tags:
english, 2007
35
Comparison of deposition models for a TEOS LPCVD process
Stefan Holzer
,
Alireza Sheikholeslami
,
Markus Karner
,
Tibor Grasser
,
Siegfried Selberherr
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 238 KB
Your tags:
english, 2007
36
VSP – A gate stack analyzer
M. Karner
,
A. Gehring
,
M. Wagner
,
R. Entner
,
S. Holzer
,
W. Goes
,
M. Vasicek
,
T. Grasser
,
H. Kosina
,
S. Selberherr
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 176 KB
Your tags:
english, 2007
37
Dielectric thin films for MEMS-based optical sensors
M. Martyniuk
,
J. Antoszewski
,
C.A. Musca
,
J.M. Dell
,
L. Faraone
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 254 KB
Your tags:
english, 2007
38
Test structures for dielectric spectroscopy of thin films at microwave frequencies
N. Delmonte
,
B.E. Watts
,
G. Chiorboli
,
P. Cova
,
R. Menozzi
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 401 KB
Your tags:
english, 2007
39
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability
B. Kaczer
,
R. Degraeve
,
Ph. Roussel
,
G. Groeseneken
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 633 KB
Your tags:
english, 2007
40
Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy
Yu.Yu. Lebedinskii
,
A.V. Zenkevich
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 169 KB
Your tags:
english, 2007
41
Electrical and structural properties of hafnium silicate thin films
I.Z. Mitrovic
,
O. Buiu
,
S. Hall
,
C. Bungey
,
T. Wagner
,
W. Davey
,
Y. Lu
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 322 KB
Your tags:
english, 2007
42
High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET
L. Pinzelli
,
M. Gros-Jean
,
Y. Bréchet
,
F. Volpi
,
A. Bajolet
,
J.-C. Giraudin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 163 KB
Your tags:
english, 2007
43
Passivation issues in active pixel CMOS image sensors
J.L. Regolini
,
D. Benoit
,
P. Morin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 331 KB
Your tags:
english, 2007
44
Volatility and vapourisation characterisation of new precursors
Simon Rushworth
,
Hywel Davies
,
Andrew Kingsley
,
Thomas Leese
,
Rajesh Odedra
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 253 KB
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english, 2007
45
Correlation between infrared transmission spectra and the interface trap density of SiO2 films
V.Em. Vamvakas
,
M. Theodoropoulou
,
S.N. Georga
,
C.A. Krontiras
,
M.N. Pisanias
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 171 KB
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english, 2007
46
Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition
V.Em. Vamvakas
,
N. Vourdas
,
S. Gardelis
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 492 KB
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english, 2007
47
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
V. Turchanikov
,
A. Nazarov
,
V. Lysenko
,
V. Ostahov
,
O. Winkler
,
B. Spangenberg
,
H. Kurz
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 783 KB
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english, 2007
48
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon
I.V. Grekhov
,
G.G. Kareva
,
S.E. Tyaginov
,
M.I. Vexler
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 445 KB
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english, 2007
49
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures
Robert Entner
,
Tibor Grasser
,
Oliver Triebl
,
Hubert Enichlmair
,
Rainer Minixhofer
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 131 KB
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english, 2007
50
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements
G. Néau
,
F. Martinez
,
M. Valenza
,
J.C. Vildeuil
,
E. Vincent
,
F. Bœuf
,
F. Payet
,
K. Rochereau
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 474 KB
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english, 2007
51
Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics
S. Dueñas
,
H. Castán
,
H. García
,
L. Bailón
,
K. Kukli
,
T. Hatanpää
,
M. Ritala
,
M. Leskelä
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 179 KB
Your tags:
english, 2007
52
Templates for LaAlO3 epitaxy on silicon
P. Boulenc
,
I. Devos
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 613 KB
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english, 2007
53
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
E. Amat
,
R. Rodríguez
,
M. Nafría
,
X. Aymerich
,
J.H. Stathis
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 144 KB
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english, 2007
54
Refined electrical analysis of two charge states transition characteristic of “borderless” silicon nitride
G. Beylier
,
S. Bruyère
,
D. Benoit
,
G. Ghibaudo
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 338 KB
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english, 2007
55
Effect of oxide breakdown on RS latches
R. Fernández
,
R. Rodrı´guez
,
M. Nafrı´a
,
X. Aymerich
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 234 KB
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english, 2007
56
Density functional theory of high-k dielectric gate stacks
Alexander A. Demkov
,
Onise Sharia
,
Xuhui Luo
,
Jaekwang Lee
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 414 KB
Your tags:
english, 2007
57
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique
Giacomo Barletta
,
Giuseppe Currò
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 401 KB
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english, 2007
58
Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices
A. Cascio
,
G. Currò
,
A. Cavagnoli
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 521 KB
Your tags:
english, 2007
59
Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage
D. Corso
,
S. Aurite
,
E. Sciacca
,
D. Naso
,
S. Lombardo
,
A. Santangelo
,
M.C. Nicotra
,
S. Cascino
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 748 KB
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english, 2007
60
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks
P. Srinivasan
,
F. Crupi
,
E. Simoen
,
P. Magnone
,
C. Pace
,
D. Misra
,
C. Claeys
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 221 KB
Your tags:
english, 2007
61
Distribution and generation of traps in SiO2/Al2O3 gate stacks
Isodiana Crupi
,
Robin Degraeve
,
Bogdan Govoreanu
,
David P. Brunco
,
Philippe Roussel
,
Jan Van Houdt
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 129 KB
Your tags:
english, 2007
62
Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices
Giuseppe Currò
,
Marco Camalleri
,
Denise Calì
,
Francesca Monforte
,
Fortunato Neri
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 198 KB
Your tags:
english, 2007
63
Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium
S.F. Galata
,
E.K. Evangelou
,
Y. Panayiotatos
,
A. Sotiropoulos
,
A. Dimoulas
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 409 KB
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english, 2007
64
Study of nanocrystal memory integration in a Flash-like NOR device
Cosimo Gerardi
,
Salvatore Lombardo
,
Giuseppe Ammendola
,
Giovanni Costa
,
Valentina Ancarani
,
Domenico Mello
,
Stella Giuffrida
,
Maria Cristina Plantamura
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 360 KB
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english, 2007
65
RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO2
T.S. Iwayama
,
T. Hama
,
D.E. Hole
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 236 KB
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english, 2007
66
Accurate determination of flat band voltage in advanced MOS structure
Charles Leroux
,
Gérard Ghibaudo
,
Gilles Reimbold
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 166 KB
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english, 2007
67
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N2O ambient of a thin SiO2 gate
F. Monforte
,
M. Camalleri
,
D. Calì
,
G. Currò
,
E. Fazio
,
F. Neri
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 190 KB
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english, 2007
68
Development of embedded capacitor with bismuth-based pyrochlore thin films at low temperatures for printed circuit board applications
Jong-Hyun Park
,
Cheng-Ji Xian
,
Nak-Jin Seong
,
Soon-Gil Yoon
,
Seung-Hyun Son
,
Hyung-Mi Chung
,
Jin-Suck Moon
,
Hyun-Joo Jin
,
Seung-Eun Lee
,
Jeong-Won Lee
,
Hyung-Dong Kang
,
Yeoul-Kyo Chung
,
Yong-Soo Oh
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 312 KB
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english, 2007
69
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique
Giuseppina Puzzilli
,
Bogdan Govoreanu
,
Fernanda Irrera
,
Maarten Rosmeulen
,
Jan Van Houdt
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 465 KB
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english, 2007
70
Reliability of HTO based high-voltage gate stacks for flash memories
Yosef Raskin
,
Asaad Salameh
,
David Betel
,
Yakov Roizin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 416 KB
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english, 2007
71
Full-band tunneling in high-κ dielectric MOS structures
F. Sacconi
,
J.M. Jancu
,
M. Povolotskyi
,
A. Di Carlo
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 329 KB
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english, 2007
72
The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices
Yu-Di Su
,
Wen-Chieh Shih
,
Joseph Ya-min Lee
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 142 KB
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english, 2007
73
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition
P. Taechakumput
,
S. Taylor
,
O. Buiu
,
R.J. Potter
,
P.R. Chalker
,
A.C. Jones
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 428 KB
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english, 2007
74
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Z. Li
,
T. Schram
,
L. Pantisano
,
A. Stesmans
,
T. Conard
,
S. Shamuilia
,
V.V. Afanasiev
,
A. Akheyar
,
S. Van Elshocht
,
D.P. Brunco
,
W. Deweerd
,
Y. Naoki
,
P. Lehnen
,
S. De Gendt
,
K. De Meyer
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 307 KB
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english, 2007
75
Peculiarities of electron tunnel injection to the drain of EEPROMs
N. Baboux
,
C. Busseret
,
C. Plossu
,
P. Boivin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 139 KB
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english, 2007
76
Parameters extraction of hafnium based gate oxide capacitors
T. Nguyen
,
C. Busseret
,
L. Militaru
,
A. Poncet
,
D. Aimé
,
N. Baboux
,
C. Plossu
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 487 KB
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english, 2007
77
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks
G. Reimbold
,
J. Mitard
,
X. Garros
,
C. Leroux
,
G. Ghibaudo
,
F. Martin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 816 KB
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english, 2007
78
Quantitative oxide charge determination by photocurrent analysis
M. Rommel
,
A.J. Bauer
,
H. Ryssel
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 219 KB
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english, 2007
79
Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
A. Zenkevich
,
Yu. Lebedinskii
,
G. Scarel
,
M. Fanciulli
,
A. Baturin
,
N. Lubovin
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 985 KB
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english, 2007
80
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures
I.P. Tyagulskyy
,
I.N. Osiyuk
,
V.S. Lysenko
,
A.N. Nazarov
,
S. Hall
,
O. Buiu
,
Y. Lu
,
R. Potter
,
P. Chalker
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 436 KB
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english, 2007
81
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma
Koutarou Tanaka
,
Hiroaki Tanaka
,
Akinobu Teramoto
,
Shigetoshi Sugawa
,
Tadahiro Ohmi
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 186 KB
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english, 2007
82
WODIM 2008 – First Announcement 15th Workshop on Dielectrics in Microelectronics June 22–26, 2008 in Bad Saarow (Berlin), Germany
Journal:
Microelectronics Reliability
Year:
2007
File:
PDF, 696 KB
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2007
83
Guest Editorial
Salvatore Lombardo
Journal:
Microelectronics Reliability
Year:
2007
Language:
english
File:
PDF, 119 KB
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english, 2007
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