Effect of oval defects in GaAs on the reliability of SiNx...

Microelectronics Reliability 2007 Vol. 47; Iss. 8

Effect of oval defects in GaAs on the reliability of SiNx metal–insulator–metal capacitors

P.J. van der Wel, J.R. de Beer, R.J.M. van Boxtel, Y.Y. Hsieh, Y.C. Wang
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Volume:
47
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2007.01.089
File:
PDF, 620 KB
english, 2007
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