Statistical simulation of random dopant induced threshold...

Microelectronics Reliability 2008 / 8 Vol. 48; Iss. 8-9

Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET

Kovac, Urban, Reid, Dave, Millar, Campbell, Roy, Gareth, Roy, Scott, Asenov, Asen
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Volume:
48
Language:
english
Pages:
4
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2008.06.027
Date:
August, 2008
File:
PDF, 636 KB
english, 2008
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