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Study of copper drift during TDDB of intermetal dielectrics...

Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle

Croes, K., Cannatá, G., Zhao, L., Tőkei, Zs.
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Volume:
48
Language:
english
Pages:
4
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2008.07.047
Date:
August, 2008
File:
PDF, 192 KB
english, 2008
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