Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress
Banu, V., Brosselard, P., Jordá, X., Montserrat, J., Godignon, P., Millán, J.Volume:
48
Language:
english
Pages:
5
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2008.07.054
Date:
August, 2008
File:
PDF, 224 KB
english, 2008