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Compositional dependence of the direct and indirect band gaps in Ge 1− y Sn y alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n -type materials
Jiang, L, Gallagher, J D, Senaratne, C L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, JVolume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/11/115028
Date:
November, 2014
File:
PDF, 1.70 MB
english, 2014