Volume 29; Issue 11

Semiconductor Science and Technology

Volume 29; Issue 11

1

AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

Leclaire, P, Chenot, S, Buchaillot, L, Cordier, Y, Théron, D, Faucher, M

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.46 MB

english, 2014

2

Spray pyrolysed microporous TiO 2 thin films by optimisation of substrate temperature for ‘all sprayed’ solar cells

Santhosh, M V, Deepu, D R, Geethu, R, Rajeev Kumar, K, Sudha Kartha, C, Vijayakumar, K P

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.67 MB

english, 2014

3

Photo-induced current transient spectroscopy of single crystal Tl 6 I 4 Se

Liu, Z, Peters, J A, Sebastian, M, Kanatzidis, M G, Im, J, Freeman, A J, Wessels, B W

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 850 KB

english, 2014

4

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

Cappelletti, M A, Cédola, A P, Peltzer y Blancá, E L

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 813 KB

english, 2014

5

Rectifying effect through the interface of SrTiO 3− δ /GaAs heterojunctions

Zhai, Z Y, Xie, Q Y, Chen, G B, Yu, A L, Zhang, F M, Wu, X S

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 836 KB

english, 2014

6

Does Bi form clusters in GaAs 1 − x Bi x alloys?

Punkkinen, M P J, Laukkanen, P, Kuzmin, M, Levämäki, H, Lång, J, Tuominen, M, Yasir, M, Dahl, J, Lu, S, Delczeg-Czirjak, E K, Vitos, L, Kokko, K

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 786 KB

english, 2014

7

Compositional dependence of the direct and indirect band gaps in Ge 1− y Sn y alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n -type materials

Jiang, L, Gallagher, J D, Senaratne, C L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, J

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.70 MB

english, 2014

8

Nano-optical analysis of GaN-based diode lasers

Friede, Sebastian, Kuehn, Sergei, Tomm, Jens W, Hoffmann, Veit, Zeimer, Ute, Weyers, Markus, Kneissl, Michael, Elsaesser, Thomas

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 842 KB

english, 2014

9

Forming-free resistive switching memory based on LiFePO 4 nano-particle embedded in conjugated polymer

Liang, Jun, Su, YanTao, Lin, Qinxian, Zhou, Hang, Zhang, ShengDong, Pei, Yanli, Hu, RuiQin

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.25 MB

english, 2014

10

Analytical study of subthreshold behaviour of double gate bilayer graphene field effect transistors

Saeidmanesh, M, Khaledian, M, Ghadiry, M, Ismail, Razali

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 839 KB

english, 2014

11

Mobility enhancement in undoped Ge 0.92 Sn 0.08 quantum well p-channel metal-oxide-semiconductor field-effect transistor fabricated on (111)-oriented substrate

Liu, Yan, Yan, Jing, Liu, Mingshan, Wang, Hongjuan, Zhang, Qingfang, Zhao, Bin, Zhang, Chunfu, Cheng, Buwen, Hao, Yue, Han, Genquan

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 979 KB

english, 2014

12

ESD robustness concern and optimization for high-voltage p-type LDMOS transistor with thin gate oxide used as the output driver

Liu, Siyang, Sun, Weifeng, Wang, Hao, Ye, Ran, Zhang, Chunwei

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.57 MB

english, 2014

13

Electron transport in ZnMgO/ZnO heterostructures

Li, Qun, Zhang, Jingwen, Zhang, Zhiyun, Li, Fengnan, Hou, Xun

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 432 KB

english, 2014

14

Defect structure and chemical bonding of p-type ZnO:Sb thin films prepared by pulsed laser deposition

Santos-Ortiz, Reinaldo, Jha, Jitendra Kumar, Sun, Wei, Nyandoto, Gilbert, Du, Jincheng, Shepherd, Nigel D

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 566 KB

english, 2014

15

A resistive switching device based on breakdown and anodic reoxidization of thin SiO 2 on Si-based electrodes using CeO x buffer layer

Hadi, M S, Kano, S, Kakushima, K, Kataoka, Y, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Natori, K, Iwai, H

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

16

Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors

Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Vorobjev, Leonid E, Belenky, Gregory

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 995 KB

english, 2014

17

Spin exchange energy for a pair of valence band holes in artificial molecules

Pasek, W J, Szafran, B, Nowak, M P

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 2.80 MB

english, 2014

18

Hysteresis and threshold switching characteristics in thin-film-transistors with inserted Pt-Fe 2 O 3 core–shell nanocrystals

Baek, Yoon-Jae, Noh, Young Jun, Choi, Young Jin, Kang, Chi Jung, Lee, Hyun Ho, Yoon, Tae-Sik

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 65 KB

english, 2014

19

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

Keller, Stacia, Li, Haoran, Laurent, Matthew, Hu, Yanling, Pfaff, Nathan, Lu, Jing, Brown, David F, Fichtenbaum, Nicholas A, Speck, James S, DenBaars, Steven P, Mishra, Umesh K

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 17.12 MB

english, 2014

20

Broadband 2.4 μ m superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules

Wootten, M B, Tan, J, Chien, Y J, Olesberg, J T, Prineas, J P

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.78 MB

english, 2014

21

Corrigendum: Analysis of interface trap states in InAlN/AlN/GaN heterostructures (2014 Semicond. Sci. Technol. 29 095011)

Zhou, Yang, Lin, Zhaojun, Luan, Chongbiao, Zhao, Jingtao, Yang, Qihao, Yang, Ming, Wang, Yutang, Feng, Zhihong, Lv, Yuanjie

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 3.17 MB

english, 2014

22

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

Jiang, Hai, Xu, Nuo, Chen, Bing, Zeng, Lang, He, Yandong, Du, Gang, Liu, Xiaoyan, Zhang, Xing

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 493 KB

english, 2014

23

Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

Faramehr, Soroush, Kalna, Karol, Igić, Petar

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

24

Low-frequency noise assessment of border traps in Al 2 O 3 capped DRAM peripheral MOSFETs

Simoen, E, Federico, A, Aoulaiche, M, Ritzenthaler, R, Schram, T, Arimura, H, Cho, M, Kauerauf, T, Groeseneken, G, Horiguchi, N, Thean, A, Crupi, F, Spessot, A, Caillat, C, Fazan, P, Na, H-J, Son, Y,

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 233 KB

english, 2014

25

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Yacoub, H, Fahle, D, Finken, M, Hahn, H, Blumberg, C, Prost, W, Kalisch, H, Heuken, M, Vescan, A

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 608 KB

english, 2014

26

Coupling of carriers injection and charges distribution in Schottky barrier charge-trapping memories using source-side electrons programming

Luo, Yan-Xiang, Shih, Chun-Hsing

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 383 KB

english, 2014

27

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge 1 − x Sn x /Ge semiconductor probed by x-ray absorption and diffraction methods

Soo, Y L, Wu, T S, Chen, Y C, Shiu, Y F, Peng, H J, Tsai, Y W, Liao, P Y, Zheng, Y Z, Chang, S L, Chan, T S, Lee, J F, Sterbinsky, G E, Li, H, Cheng, H H

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 429 KB

english, 2014

28

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Vasallo, B G, Millithaler, J F, Íñiguez-de-la-Torre, I, González, T, Ducournau, G, Gaquière, C, Mateos, J

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 569 KB

english, 2014

29

Palladium assisted hetroepitaxial growth of an InAs nanowire by molecular beam epitaxy

Perumal, R, Cui, Zhixin, Gille, Patniarche, Harmand, Jean-Christophe, Yoh, Kanji

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 6.24 MB

english, 2014

30

Diffraction limited 3.15 μ m cascade diode lasers

Liang, Rui, Shterengas, Leon, Hosoda, Takashi, Stein, Aaron, Lu, Ming, Kipshidze, Gela, Belenky, Gregory

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 418 KB

english, 2014

31

Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit

Rumyantsev, S L, Levinshtein, M E, Saxena, T, Shur, M S, Cheng, L, Palmour, J W, Agarwal, A

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

32

Optimization and characterization of NiO thin film and the influence of thickness on the electrical properties of n-ZnO nanorods/p-NiO heterojunction

Echresh, Ahmad, Ali Abbasi, Mazhar, Zargar Shoushtari, Morteza, Farbod, Mansoor, Nur, Omer, Willander, Magnus

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 106 KB

english, 2014

33

Localization and field-periodic conductance fluctuations in trilayer graphene

El-Bana, Mohammed S, Wolverson, Daniel, Horsell, David W, Bending, Simon J

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 151 KB

english, 2014

34

Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

Martin-Horcajo, S, Wang, A, Romero, M F, Tadjer, M J, Koehler, A D, Anderson, T J, Calle, F

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 2.31 MB

english, 2014

35

Conduction gap in graphene strain junctions: direction dependence

Nguyen, M Chung, Nguyen, V Hung, Nguyen, Huy-Viet, Dollfus, P

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.75 MB

english, 2014

36

Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Sultana, M, Muhtadi, S, Lachab, M, Adivarahan, V, Khan, A

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

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