Ionization thresholds in silicon and germanium avalanche...

IEEE Transactions on Electron Devices 1989 / Nov. Vol. 36; Iss. 11

Ionization thresholds in silicon and germanium avalanche photodiodes under hydrostatic pressure and strain

Allam, J., Czajkowski, I.K., Silver, M., Adams, A.R., Gell, M.A.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.43752
Date:
January, 1989
File:
PDF, 295 KB
english, 1989
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