Volume 36; Issue 11

IEEE Transactions on Electron Devices

Volume 36; Issue 11

1

Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Tomizawa, M., Furuta, T., Yokoyama, K., Yoshii, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 558 KB

english, 1989

2

High-porosity thick-film getters

Giorgi, E., Ferrario, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 367 KB

english, 1989

3

Potential device applications using photorefractive materials

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 144 KB

english, 1989

4

A wide-bandwidth high-gain small-size distributed amplifier with field-emission triodes (FETRODEs) for the 10 to 300 GHz frequency range

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 793 KB

english, 1989

5

Gigatron

McIntyre, P.M., Bizek, H.M., Elliott, S.M., Nassiri, A., Popovic, M.B., Raparia, D., Swenson, C.A., Gray, H.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 653 KB

english, 1989

6

Monolithic mode locked 1.3 mu m laser with active waveguide and saturable absorber

Morton, P.A., Bowers, J.E., Koszi, L.A., Soler, M., Lopata, J., Wilt, D.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 309 KB

english, 1989

7

Self-aligned AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistors for microwave applications

Chang, M.F., Sheng, N.H., Asbeck, P.M., Sullivan, G.J., Wang, K.C., Anderson, R.J., Higgins, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 162 KB

english, 1989

8

Power integrated circuits-progress, prospects and challenges

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 298 KB

english, 1989

9

The linearity and sensitivity of lateral effect position sensitive devices-an improved geometry

Wang, W., Busch-Vishniac, I.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 712 KB

english, 1989

10

Temperature acceleration of time-dependent dielectric breakdown

Moazzami, R., Lee, J.C., Hu, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 448 KB

english, 1989

11

Shadowing effects due to tilted arsenic source/drain implant

Krieger, G., Spadini, G., Cuevas, P.P., Schuur, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

12

High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI

Lu, C.-Y., Sung, J.J., Kirsch, H.C., Tsai, N.-S., Liu, R., Manocha, A.S., Hillenius, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 713 KB

english, 1989

13

Wet etching of cusp structures for field-emission devices

Cade, N.A., Lee, R.A., Patel, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 831 KB

english, 1989

14

High speed and compact CMOS circuits with multi-pillar surrounding gate transistors

Nitayama, A., Horiguchi, F., Takato, H., Okabe, N., Sunouchi, K., Hieda, K., Masuoka, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 305 KB

english, 1989

15

Ionization thresholds in silicon and germanium avalanche photodiodes under hydrostatic pressure and strain

Allam, J., Czajkowski, I.K., Silver, M., Adams, A.R., Gell, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 295 KB

english, 1989

16

A generalized model for total electrical characterization of bulk traps and interface properties in semiconductor-insulator-semiconductor structure: static, dynamic, and transient approaches

Chen, H.S., Li, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 306 KB

english, 1989

17

Monolithic infrared sensor array in heteroepitaxial Pb/sub 1-x/Sn/sub x/Se on Si with 12- mu m cutoff wavelength

Maissen, C., Zogg, H., Masek, J., Blunier, S., Lambrecht, A., Bottner, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 159 KB

english, 1989

18

Microwave characterization of the contiguous domain oscillator

Cooper, J.A., Yin, Y., Balzan, M.L., Geissberger, A.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

19

Non-linear optical rectification at 10.6 mu m in compositionally asymmetrical GaAs/AlGaAs multi-quantum wells

Rosencher, E., Bois, P., Nagle, J., Delaitre, S., Costard, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 303 KB

english, 1989

20

Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide

Nishioka, Y., Ohji, Y., Ohyu, K., Mukai, K., Ma, T.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 156 KB

english, 1989

21

Quantum interference devices fabricated using molecular-beam epitaxy and ultra-high-resolution electron-beam lithography

Chou, S.Y., Alee, D.R., Pease, R.F.W., Harris, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 293 KB

english, 1989

22

A cross section of alpha -particle-induced soft-error phenomena in VLSIs

Takeda, E., Takeuchi, K., Hisamoto, D., Toyabe, T., Ohshima, K., Itoh, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 841 KB

english, 1989

23

Comparative rating of logic active devices

Giacoletto, L.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 128 KB

english, 1989

24

Imaging and manipulating molecules with the scanning tunneling microscope

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 144 KB

english, 1989

25

High-efficiency 0.25- mu m gate-length pseudomorphic power heterostructure FETs at millimeter-wave frequencies

Lester, L.F., Kao, M.-Y., Ho, P., Ferguson, D.W., Smith, R.P., Smith, P.M., Ballingall, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 295 KB

english, 1989

26

Electron and hole charge separation with a dual channel transistor

Roy, A., White, M.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 156 KB

english, 1989

27

Interface state generation by negative gate-bias irradiation of MOS structures

Kenkare, P.U., Lyon, S.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 306 KB

english, 1989

28

Coherent two-dimensional surface-emitting arrays of strained InGaAs/AlGaAs quantum-well lasers

Bour, D.P., Evans, G.A., Carlson, N., Hammer, J.M., Lurie, M., Palfrey, S.L., Butler, J.K., Amantea, R., Carr, L.A., Hawrylo, F.Z., James, E.A., Kirk, J.B., Liew, S.K., Reichert, W.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 304 KB

english, 1989

29

High current density emitter-down InGaAlAs heterojunction bipolar transistors

Sato, H., Vlcek, J.C., Fonstad, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

30

A new high-resolution 11-mm diagonal image sensor for still-picture photography

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.06 MB

english, 1989

31

MBE-grown Ge/GaAs heterojunction bipolar transistors operated at 300 K and 77 K with current gain of 45

Kimura, T., Kawanaka, M., Sone, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 307 KB

english, 1989

32

Superconducting versus optical interconnections

Tewksbury, S.K., Hornak, L.A., Hatamian, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

33

Light emission from the GaAs/AlGaAs HBT collector junction at breakdown

Chen, J., Gao, G.B., Huang, D., Chyi, J.I., Unlu, M.S., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 310 KB

english, 1989

34

Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistors

Jalali, B., Nottenburg, R.N., Chen, Y.K., Levi, A.F.J., Cho, A.Y., Panish, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

35

Non-linear source/drain effects in amorphous-silicon thin-film transistors

Troutman, R., Kotwal, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

36

Hot-electron injection in AlGaSb/GaSb HBT-its relation to the conduction band structure of GaSb

Furukawa, A., Mizuta, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

37

Field distribution and avalanche breakdown of trench MOS capacitors operated in deep depletion

Bulucea, C., Kump, M.R., Amberiadis, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 896 KB

english, 1989

38

High performance AlInAs/GaInAs HBTs for high speed, low power digital circuits

Farley, C.W., Chang, M.F., Asbeck, P.M., Wang, K.C., Sheng, N.H., Pierson, R., Nubling, R.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 305 KB

english, 1989

39

Experimental dependence of resonant tunnel diode current on accumulation layer band profiles

Lear, K.L., Lee, W.S., Harris, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

40

High performance single and multiple quantum well InGaAs/InP lasers

Tanbun-Ek, T., Temkin, H., Logan, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

41

Preparation and characterization of zirconium carbide field emitters

Mackie, W.A., Hinrichs, C.H., Davis, P.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 682 KB

english, 1989

42

10/sup 5/ times biasing current improvement in an electron wave interference device with vertical superlattices

Tsubaki, K., Tokura, Y., Fukui, T., Saito, H., Susa, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

43

Process dependence of hole trapping in thin nitrided SiO/sub 2/ films

Severi, M., Dori, L., Impronta, M., Guerri, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 597 KB

english, 1989

44

A vertical field-effect transistor with an InGaAs/GaAs pseudomorphic planar doped barrier launcher

Won, Y.H., Yamasaki, K., Tasker, P.J., Daniels-Race, T., Schaff, W.J., Eastman, L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 301 KB

english, 1989

45

Direct measurement of hot-carrier stress effects on CMOS circuit performance

Hu, S.C., Brassington, M.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 308 KB

english, 1989

46

Physical considerations in vacuum microelectronics devices

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 319 KB

english, 1989

47

Negative transconductance in monocrystalline (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor tunneling transistors

Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 301 KB

english, 1989

48

Computer-simulated explosion of poly-silicide links in laser-programmable redundancy for VLSI memory repair

Chlipala, J.D., Scarfone, L.M., Lu, C.-Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 740 KB

english, 1989

49

Capacitance-voltage analysis and current modeling of pulse-doped MODFETs

Roblin, P., Rohdin, H., Hung, C.J., Chiu, S.-W.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.06 MB

english, 1989

50

Semiconductor fabrication technology applied to micrometer valves

Lee, R.A., Patel, C., Williams, H.A., Cade, N.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.24 MB

english, 1989

51

Monolithically integrated InGaAs p-i-n InP-MISFET PINFET grown by chloride vapor phase epitaxy

Antreasyan, A., Garbinski, P.A., Mattera, V.D., Temkin, H., Olson, N.A., Filipe, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 152 KB

english, 1989

52

Time-resolved phonon-assisted stimulated emission in quantum-well heterostructures

Benjamin, S.D., Lo, Y.C., Kolbas, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

53

Theoretical and practical aspects of three-terminal silicon heterostructure switches

Chol, A.M., Green, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 641 KB

english, 1989

54

A planar resonant-tunneling field-effect transistor

Ismail, K., Antoniadis, D.A., Smith, H.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

55

3-D effects in emitter-base junctions in advanced silicon bipolar transistors

Josquin, W.J.M.J., van Dijk, J., Hurkx, G.A.M., Knuvers, M.P.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 260 KB

english, 1989

56

Germanium p-channel MOSFET's with high channel mobility, transconductance, and k-value

Martin, S.C., Hitt, L.M., Rosenberg, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 305 KB

english, 1989

57

Observation of quantum coherence properties of the hot electron

Miyamoto, Y., Uesaka, K., Yamaura, S., Furuya, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

58

Array concepts for solid-state and vacuum microelectronics millimeter-wave generation

Hwu, R.J., Jou, C.F., Luhmann, N.C., Kim, M., Lam, W.W., Popovic, Z.B., Rutledge, D.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 656 KB

english, 1989

59

BiMOS transistors: merged bipolar/sidewall MOS transistors

O, K.K., Reif, R., Lee, H.-S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

60

High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate

Chakrabarti, U.K., Seabury, C.W., Dutta, N.K., Vella-Coleiro, G.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 296 KB

english, 1989

61

A new index-guided AlGaInP visible semiconductor laser with very small astigmatism

Takahashi, Y., Mannoh, M., Hoshina, J., Kamiyama, S., Sasai, Y., Ohnaka, K., Ogura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

62

Mechanisms of current rectification in an STM tunnel junction and the measurement of an operational tunneling time

Nguyen, H.Q., Cutler, P.H., Feuchtwang, T.E., Huang, Z.-H., Kuk, Y., Silverman, P.J., Lucas, A.A., Sullivan, T.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 861 KB

english, 1989

63

Characterization of Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy

Hong, W.-P., Harbison, J., Florez, L.T., Abeles, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

64

Performance of vertically coupled backside fiber-optic interconnections to GaAs

Ade, R.W., Fossum, E.R., Tischler, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

65

Modeling of stress effects in silicon oxidation

Sutardja, P., Oldham, W.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 619 KB

english, 1989

66

Proposed planar scanning tunneling microscope diode: application as an infrared and optical detector

Sullivan, T.E., Kuk, Y., Cutler, P.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 667 KB

english, 1989

67

Achievement of high gain in a planar heterojunction bipolar transistor with lateral current flow

Thornton, R.L., Mosby, W.J., Chung, H.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 162 KB

english, 1989

68

Superlattice base hot-electron transistors

England, P., Hayes, J.R., Colas, E., Helm, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

69

delta -doped FET with sidewall source and drain by atomic layer epitaxy

Hashemi, M., Ramdani, J., McDermott, B., Bedair, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

70

A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature

Acovic, A., Dutoit, M., Ilegems, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 164 KB

english, 1989

71

A novel 0.5- mu m n/sup +/-p/sup +/ poly-gated salicide CMOS process

Pfiester, J.R., Yeargain, J.R., Swenson, M.S., Alvis, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 813 KB

english, 1989

72

Surface superlattices and quasi-one-dimensional conductors in GaAs HEMTs: how best to compare theory and experiment?

Bagwell, P.F., Ismail, K., Ghanbari, R., Chu, W., Yen, A., Antoniadis, D.A., Smith, H.I., Orlando, T.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

73

A new approach to accurate X-ray mask measurements in a scanning electron microscope

Postek, M.T., Larrabee, R.D., Keery, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 662 KB

english, 1989

74

The influence of electric field and mobility profile on GaAs MESFET characteristics

Chen, C.-H., Arch, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 870 KB

english, 1989

75

Anomalous punchthrough in ULSI buried-channel MOSFETs

Skotnicki, T., Merckel, G., Pedron, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 753 KB

english, 1989

76

Picosecond optical detection of longitudinal spatial hole burning in an AlGaAs semiconductor laser

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 301 KB

english, 1989

77

The modulated-gate FET-a novel MOSFET structure exhibiting controlled negative resistance

Gill, B.S., Heasell, E.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 502 KB

english, 1989

78

Heteroepitaxial YBa/sub 2/Cu/sub 3/O/sub 7-x/-PrBa/sub 2/Cu/sub 3/O/sub 7-x/-YBa/sub 2/Cu/sub 3/O/sub 7-x/ weak links grown by laser deposition

Rogers, C.T., Inam, A., Hegde, M.S., Venkatesan, T., Wu, X.D., Dutta, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 114 KB

english, 1989

79

Unified nonquasi-static modeling of the long-channel four-terminal MOSFET for large- and small-signal analyses

Chai, K.-W., Paulos, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 703 KB

english, 1989

80

Development of a GaAs avalanche electron-emitting diode cold-electron emitter

van Zutphen, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 592 KB

english, 1989

81

Application of self-aligned CoSi/sub 2/ interconnection in submicrometer CMOS transistors

Broadbent, E.K., Irani, R.F., Morgan, A.E., Maillot, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 725 KB

english, 1989

82

Electron energy spectroscopy and the observation of ballistic transport of hot electrons in the plane of a 2DEG

Palevski, A., Heiblum, M., Umbach, C.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

83

A floating-gate transmission-line model technique for measuring source resistance in heterostructure field-effect transistors

Del Alamo, J.A., Azzam, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 763 KB

english, 1989

84

WN/sub x/ diodes on plasma-treated GaAs surfaces

Paccagnella, A., Callegari, A., Braslau, N., Hovel, H., Murakami, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 382 KB

english, 1989

85

Technology of superconducting thin films on Si, SiO/sub 2/, and Si/sub 3/N/sub 4/ for vacuum microelectronics

Aslam, M., Soltis, R.E., Logothetis, E.M., Chase, R.E., Wenger, L.E., Chen, J.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 417 KB

english, 1989

86

An X-band tuned amplifier with a field-emission cathode

Lally, P.M., Goren, Y., Nettesheim, E.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

File:

PDF, 472 KB

1989

87

Optical exclusive OR logic operation of tunable wavelength conversion laser diode

Nobuhara, H., Kondo, K., Yamakoshi, S., Wakao, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

88

Band structure engineering for electron tunneling in heterostructures

Beresford, R., Luo, L., Wang, W.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 153 KB

english, 1989

89

InP-based HIGFETs for complementary circuits

Feuer, M.D., He, Y., Tennant, D.M., Shunk, S.C., Brown-Goebeler, K.F., Behringer, R.E., Chang, T.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

90

A novel technique for fabrication of fully depleted CMOS devices in ultra-thin SOI films

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

91

High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

Schumacher, H., Gmitter, T.J., LeBlanc, H.P., Bhat, R., Yablonovitch, E., Koza, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

92

Super-miniaturization of low-power vacuum microwave devices

Gulyaev, Y.V., Sinitsyn, N.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 199 KB

english, 1989

93

Keynote address to the first international vacuum microelectronics conference, June 1988: pathways to vacuum microelectronics

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 399 KB

english, 1989

94

A single-chip SQUID having an improved superconducting storage-loop

Fujimaki, N., Tamura, H., Suzuki, H., Imamura, T., Hasuo, S., Shibatomi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 296 KB

english, 1989

95

Subthreshold I-V characteristics of AlGaAs/GaAs MODFETs: the role of unintentional acceptors

Krantz, R.J., Bloss, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 283 KB

english, 1989

96

Submicrometer near-intrinsic thin-film SOI complementary MOSFETs

Lee, C.-T., Young, K.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 896 KB

english, 1989

97

Quantum inversion layer mobility: numerical results

Padmanabhan, S., Rothwarf, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 834 KB

english, 1989

98

GaAs photodetectors integrated with lithium niobate waveguides

Chan, W.K., Yi-Yan, A., Gmitter, T., Florez, L.T., Jackel, J.L., Yablonovitch, E., Bhat, R., Harbison, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 298 KB

english, 1989

99

High-quality thin-film SOI technology using wafer bonding and selective polishing for VLSIs

Matsushita, T., Satoh, H., Shimanoe, M., Nieda, A., Hashimoto, M., Ogasawara, A., Yamagishi, M., Yagi, A., Saitoh, Y., Sakai, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

100

Electron transport in AlSb/InAs/GaSb tunneling hot-electron transistor

Chiu, T.H., Levi, A.F.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 292 KB

english, 1989

101

Use of tilted-superlattices for quantum-well-wire lasers

Tsuchiya, M., Petroff, P.M., Coldren, L.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 299 KB

english, 1989

102

Stimulated emission from monolayer thick quantum-well heterostructures

Lee, J.H., Hiseh, K.Y., Kolbas, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 157 KB

english, 1989

103

Numerical and experimental analysis of 500-V power DMOSFET with an atomic-lattice layout

Chang, H.R., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

104

An extremely abrupt switching phenomenon in small-dimension polysilicon TFT structures with enhanced grain size

Yamauchi, N., Hajjar, J.-J.J., Reif, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 300 KB

english, 1989

105

Room-temperature operation of a GaAs/AlGaAs superlattice self-electrooptic-effect device

Kuo, J.M., Kopf, R.F., Bar-Joseph, I., Goossen, K.W., Miller, D.A.B., Chemla, D.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 299 KB

english, 1989

106

Monolithic integrated external cavity GaAs/AlGaAs lasers with selectively disordered quantum well passive waveguides

Werner, J., Kapon, E., Stoffel, N.G., Colas, E., Schwarz, S.A., Schwartz, C.L., Andreadakis, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

107

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

Offsey, S.D., Schaff, W.J., Tasker, P.J., Eastman, L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 163 KB

english, 1989

108

InGaAs superconducting JFETs with Nb electrodes

Kleinsasser, A.W., Jackson, T.N., McInturff, D., Pettit, G.D., Rammo, F., Woodall, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

109

Noise characteristics of lattice-matched InGaAs/InAlAs heterostructure p-i-n photodiodes

Bosman, G., Yu, Y.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 158 KB

english, 1989

110

The physics of vacuum microelectronic devices

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 144 KB

english, 1989

111

Injection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistors

Cressler, J.D., Tang, D.D.-L., Yang, E.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.08 MB

english, 1989

112

Conductivity properties of narrow-channel polysilicon thin-film transistors

Yamauchi, N., Hajjar, J.-J.J., Reif, R., Nakazawa, K., Tanaka, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 301 KB

english, 1989

113

Heterojunction ion-implanted FETs (HIFETs)

Wang, G.W., Feng, M., Liaw, Y.P., Kaliski, R., Lau, C.L., Chang, Y., Ito, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 156 KB

english, 1989

114

Application of electrical effective channel length and external resistance measurement techniques to a submicrometer CMOS process

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 452 KB

english, 1989

115

Computer simulation of hot-carrier effects in asymmetric LDD and LDS MOSFET devices

Chen, Y.-Z., Tang, T.-W.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 685 KB

english, 1989

116

High-speed response of InAlAs/InGaAs M-S-M photodetectors at 1.3- and 1.5- mu m wavelengths: experiment and theory

Soole, J.B.D., Schumacher, H., LeBlanc, H.P., Bhat, R., Koza, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 291 KB

english, 1989

117

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

Ruden, P.P., Shur, M., Arch, D.K., Daniels, R.R., Grider, D.E., Nohava, T.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 804 KB

english, 1989

118

Theoretical and experimental investigation of watt-level wafer scale integration microwave and millimeter-wave GaAs and AlGaAs frequency multipliers

Hwu, R.H., Sadwick, L.P., Luhmann, N.C., Rutledge, D.B., Sokolich, M., Streit, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 293 KB

english, 1989

119

Study of hole miniband transport in Ge/sub x/Si/sub 1-x//Si superlattice

Karunasiri, R.P.G., Park, J.S., Wang, K.L., Yuh, F.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 161 KB

english, 1989

120

A small-area light intensity modulator implemented in silicon

Hemenway, B.R., Solgaard, O., Bloom, D.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

121

Microstructures for control of multiple ion or electron beams

Jones, G.W., Jones, S.K., Walters, M.D., Dudley, B.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 736 KB

english, 1989

122

Long-wavelength (0.1-1.6 mu m) In/sub 0.53/(Ga/sub x/Al/sub 1-x/)/sub 0.47/ As/In/sub 0.53/Ga/sub 0.47/As MSM photodiode

Griem, H.T., Ray, S., Freeman, J.L., West, D.L., Schaff, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

123

The effects of X-rays on p-n junction leakage currents

Tang, D.D., Hackbarth, E., Maldonado, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 472 KB

english, 1989

124

Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy

Tai, K., Fischer, R.J., Seabury, C.W., Olson, N.A., Huo, D.T.C., Ota, Y., Deppe, D.G., Cho, A.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 154 KB

english, 1989

125

Modeling and fabricating micro-cavity integrated vacuum tubes

Orvis, W.J., McConaghy, C.F., Ciarlo, D.R., Yee, J.H., Hee, E.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.16 MB

english, 1989

126

Indium channel implants for improved MOSFET behavior at the 100-nm channel length regime

Shahidi, G.G., Antoniadis, D.A., Smith, H.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 160 KB

english, 1989

127

Very high frequency performance of nanometre scale GaAs MESFETs

Adams, J.A., Thayne, I.G., Taylor, M.R.S., Wilkinson, C.D.W., Beaumont, S.P., Johnson, N.P., Kean, A.H., Stanley, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

128

Field emission from tungsten-clad silicon pyramids

Busta, H.H., Shadduck, R.R., Orvis, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 1.03 MB

english, 1989

129

Characterization of parabolic light-hole effects on an implanted-planar-buried-heterostructure graded-index separate-confinement-heterostructure InGaAs-AlGaAs strained-layer laser

Vawter, G.A., Myers, D.R., Hohimer, J.P., Brennan, T.M., Hammons, B.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 163 KB

english, 1989

130

Impact of buffer layer design on the performance of AlInAs-GaInAs HEMTs

Mishra, U.K., Brown, A.S., Jelloian, L.M., Melendes, M.A., Thompson, M., Rosenbaum, S.E., Larson, L.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 155 KB

english, 1989

131

Computer simulation of a wave packet tunneling through a square barrier

Huang, Z.-H., Cutler, P.H., Feuchtwang, T.E., Good, R.H., Kazes, E., Nguyen, H.Q., Park, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 656 KB

english, 1989

132

Proceedings of 47th Annual Device Research Conference (papers in summary form only received)

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 4.51 MB

english, 1989