The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology
Cresslex, J.D., Hamilton, M.C., Mullinax, G.S., Li, Y., Niu, G., Marshall, C.J., Marshall, P.W., Kim, H.S., Palmer, M.J., Joseph, A.J., Freeman, G.Volume:
47
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.903801
Date:
January, 2000
File:
PDF, 144 KB
english, 2000