Highly Uniform Bipolar Resistive Switching With $...

IEEE Electron Device Letters 2010 / 04 Vol. 31; Iss. 4

Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

Lin Chen,, Yan Xu,, Qing-Qing Sun,, Han Liu,, Jing-Jing Gu,, Shi-Jin Ding,, Zhang, D.W.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2041183
Date:
April, 2010
File:
PDF, 372 KB
english, 2010
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