Volume 31; Issue 4

IEEE Electron Device Letters

Volume 31; Issue 4

1

107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Tirelli, S., Marti, D., Haifeng Sun, Alt, A.R., Benedickter, H., Piner, E.L., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 423 KB

english, 2010

2

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 237 KB

english, 2010

3

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Ya-Hui Yang, Yang, S.S., Chen-Yen Kao, Kan-San Chou

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 289 KB

english, 2010

4

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With

Haifeng Sun, Alt, A.R., Benedickter, H., Feltin, E., Carlin, J.-F., Gonschorek, M., Grandjean, N., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 397 KB

english, 2010

5

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

Ielmini, D., Nardi, F., Cagli, C., Lacaita, A.L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 283 KB

english, 2010

6

Ultrasonic Energy Transmission and Conversion Using a 2-D MEMS Resonator

Zhu, Y., Moheimani, S.O.R., Yuce, M.R.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 439 KB

english, 2010

7

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

Knoch, J., Appenzeller, J.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 343 KB

english, 2010

8

High-$\kappa$/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

Khater, M.H., Zhen Zhang,, Jin Cai,, Lavoie, C., D'Emic, C., Qingyun Yang,, Bin Yang,, Guillorn, M., Klaus, D., Ott, J.A., Yu Zhu,, Ying Zhang,, Changhwan Choi,, Frank, M.M., Kam-Leung Lee,, N

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

9

Optimal Global Interconnects for Networks-on-Chip in Many-Core Architectures

A. Balakrishnan, A. Naeemi

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 293 KB

english, 2010

10

AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

B. Mcfarlane, P. Kurahashi, D. Heineck, R. Presley, E. Sundholm, J. Wager

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 198 KB

english, 2010

11

High-Frequency Half-Bit Shift Register With Amorphous-Oxide TFT

A. Jamshidi-roudbari, S. Khan, M. Hatalis

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 317 KB

english, 2010

12

Correlation Between the $V_{\rm th}$ Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap Density

S. Sahhaf, R. Degraeve, V. Srividya, B. Kaczer, D. Gealy, N. Horiguchi, M. Togo, T. Hoffmann, G. Groeseneken

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 315 KB

english, 2010

13

Suresh, A., Wellenius, P., Baliga, V., Luo, H., Lunardi, L.M., Muth, J.F.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 324 KB

english, 2010

14

“Non-Hydrogen-Transport” Characteristics of Dynamic Negative-Bias Temperature Instability

Zhi Qiang Teo, Diing Shenp Ang, Chee Mang Ng

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 302 KB

english, 2010

15

Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser

A. Baiano, R. Ishihara, J. Van Der Cingel, K. Beenakker

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 148 KB

english, 2010

16

Piner, E.L., Palacios, T., Bin Lu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

17

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Paul, A., Mehrotra, S., Luisier, M., Klimeck, G.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 268 KB

english, 2010

18

High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

Kyung-Bae Park,, Jong-Baek Seon,, Gun Hee Kim,, Mino Yang,, Bonwon Koo,, Hyun Jae Kim,, Myung-Kwan Ryu,, Sang-Yoon Lee,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 353 KB

english, 2010

19

Frequency-Independent $RC$ Circuit Model for One-Dimensional Carbon Nanostructures

Madriz, F.R., Yamada, T., Xuhui Sun,, Nickel, J.G., Yang, C.Y.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 328 KB

english, 2010

20

Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs

Minseok Jo,, Seonghyun Kim,, Seungjae Jung,, Ju-Bong Park,, Joonmyoung Lee,, Hyung-Suk Jung,, Choi, R., Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

21

Flash Cell Arrays

Se Hoon Lee,, Mincheol Park,, Byung Yong Choi,, Suk-Kang Sung,, Tae Hun Kim,, Byongsun Ju,, Dong Chan Kim,, Choong-Ho Lee,, Keonsoo Kim,, Jungdal Choi,, Kinam Kim,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 315 KB

english, 2010

22

The Strong Dependence of Polarization Fatigue on Poling-Voltage Conditions in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer Films

GuoDong Zhu,, Yu Cong,, JiHao Zhang,, XiaoYa Luo,, XueJian Yan,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 345 KB

english, 2010

23

Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultrathin Body nMOSFETs

Shimizu, K., Saraya, T., Hiramoto, T.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 404 KB

english, 2010

24

Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

Lin Chen,, Yan Xu,, Qing-Qing Sun,, Han Liu,, Jing-Jing Gu,, Shi-Jin Ding,, Zhang, D.W.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 372 KB

english, 2010

25

Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

Knoll, L., Zhao, Q.T., Habicht, S., Urban, C., Ghyselen, B., Mantl, S.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 345 KB

english, 2010

26

Microwave Performance of $\hbox{InAlAsSb/In}_{0.35} \hbox{Ga}_{0.65}\hbox{Sb/InAlAsSb}$ Double Heterojunction Bipolar Transistors

Mairiaux, E., Desplanque, L., Wallart, X., Zaknoune, M.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 271 KB

english, 2010

27

Gate Enhanced Power UMOSFET With Ultralow On-Resistance

Ying Wang,, Hai-Fan Hu,, Wen-Li Jiao,, Chao Cheng,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 317 KB

english, 2010

28

Efficient and Air-Stable Polymer Photovoltaic Devices With $\hbox{WO}_{3}$–$\hbox{V}_{2}\hbox{O}_{5}$ Mixed Oxides as Anodic Modification

Jing-Shun Huang,, Chen-Yu Chou,, Ching-Fuh Lin,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 346 KB

english, 2010

29

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Qingyun Zuo,, Shibing Long,, Shiqian Yang,, Qi Liu,, Lubing Shao,, Qin Wang,, Sen Zhang,, Yingtao Li,, Yan Wang,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

30

Self-Aligned-Gate ZnO TFT Circuits

Mourey, D.A., Zhao, D.A., Jackson, T.N.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

31

Enhanced Via Integration Process for Copper/Ultralow- $k$ Interconnects

Yang, C.-C., Chen, F., Li, B., Edelstein, D.C.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 603 KB

english, 2010

32

Incomplete Filament Crystallization During Set Operation in PCM Cells

Mantegazza, D., Ielmini, D., Pirovano, A., Lacaita, A.L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 304 KB

english, 2010

33

Design High-Efficiency Si Nanopillar-Array-Textured Thin-Film Solar Cell

Wong, S.M., Yu, H.Y., Li, J.S., Zhang, G., Lo, P., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 282 KB

english, 2010

34

Perfectly Complementary Relay Design for Digital Logic Applications

Jaeseok Jeon,, Pott, V., Hei Kam,, Nathanael, R., Alon, E., Tsu-Jae King Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 535 KB

english, 2010

35

Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

Tsuchiya, H., Maenaka, A., Mori, T., Azuma, Y.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 205 KB

english, 2010

36

Fast Flexible Plastic Substrate ZnO Circuits

Dalong Zhao,, Mourey, D.A., Jackson, T.N.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 435 KB

english, 2010

37

Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film

Heonjun Ha,, Ohyun Kim,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 101 KB

english, 2010

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