Germanium n+/p Shallow Junction With Record...

IEEE Transactions on Electron Devices 2014 / 9 Vol. 61; Iss. 9

Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Wang, Chen, Li, Cheng, Lin, Guangyang, Lu, Weifang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan, Di, Zengfeng, Zhang, Miao
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2332461
Date:
September, 2014
File:
PDF, 1.71 MB
english, 2014
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