Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices
Mondal, Somnath, Her, Jim-Long, Chen, Fa-Hsyang, Shih, Shao-Ju, Pan, Tung-MingVolume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2196672
Date:
July, 2012
File:
PDF, 477 KB
english, 2012