Submicron gate...

IEEE Electron Device Letters 2003 / 09 Vol. 24; Iss. 9

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

Adivarahan, V., Gaevski, M., Sun, W.H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., Khan, M.A., Tarakji, A., Shur, M.S., Gaska, R.
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2003.816574
Date:
September, 2003
File:
PDF, 250 KB
english, 2003
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