Improved Electrical Properties of Ge p-MOSFET With $...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

Xu, J.P., Zhang, X.F., Li, C.X., Lai, P.T., Chan, C.L.
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2008.2004282
Date:
October, 2008
File:
PDF, 443 KB
english, 2008
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