![](/img/cover-not-exists.png)
Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1 0 0)/SiO2 interfaces
Karthik Ravichandran, Wolfgang WindlVolume:
124-125
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2005.08.094
File:
PDF, 135 KB
english, 2005