Volume 124-125; Issue none

Materials Science and Engineering: B

Volume 124-125; Issue none
4

Dislocation–impurity interaction in Si

Year:
2005
Language:
english
File:
PDF, 176 KB
english, 2005
35

Ab initio calculations of the interaction between native point defects in silicon

Year:
2005
Language:
english
File:
PDF, 300 KB
english, 2005
37

Boron diffusion in amorphous silicon

Year:
2005
Language:
english
File:
PDF, 125 KB
english, 2005
40

Trends, demands and challenges in TCAD

Year:
2005
Language:
english
File:
PDF, 359 KB
english, 2005
47

Strain engineering in SOI-type materials for future technologies

Year:
2005
Language:
english
File:
PDF, 585 KB
english, 2005
59

Si nanocrystal-containing SiOx (x 

Year:
2005
Language:
english
File:
PDF, 362 KB
english, 2005
70

Recent advances in nanoparticle memories

Year:
2005
Language:
english
File:
PDF, 383 KB
english, 2005
72

Engineered substrates and their future role in microelectronics

Year:
2005
Language:
english
File:
PDF, 518 KB
english, 2005
77

Inside front cover

Year:
2005
Language:
english
File:
PDF, 37 KB
english, 2005
78

author index

Year:
2005
File:
PDF, 31 KB
2005
79

subject index

Year:
2005
Language:
english
File:
PDF, 66 KB
english, 2005
87

Wafer bonding involving strain-relaxed SiGe

Year:
2005
Language:
english
File:
PDF, 231 KB
english, 2005
100

Sulphur doped silicon light emitting diodes

Year:
2005
Language:
english
File:
PDF, 247 KB
english, 2005
102

Ab initio assisted process modeling for Si-based nanoelectronic devices

Year:
2005
Language:
english
File:
PDF, 564 KB
english, 2005