Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency Small-Signal Measurements

Sahoo, Amit Kumar, Fregonese, Sébastien, Zimmer, Thomas, Malbert, Nathalie
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2091252
Date:
February, 2011
File:
PDF, 361 KB
english, 2011
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