Comparison of forming gas, nitrogen, and vacuum anneal...

IEEE Transactions on Nuclear Science 1995 / Dec. Vol. 42; Iss. 6

Comparison of forming gas, nitrogen, and vacuum anneal effects on X-ray irradiated MOSFETs

Pagey, M.P., Milanowski, R.J., Henegar, K.T., Bhuva, B.L., Kerns, S.E.
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Volume:
42
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.488776
Date:
January, 1995
File:
PDF, 728 KB
english, 1995
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