Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3...

Materials Science in Semiconductor Processing 2005 Vol. 8; Iss. 1-3

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process

D.J. Paul, M. Temple, S.H. Olsen, A.G. ONeill, Y.T. Tang, A.M. Waite, C. Cerrina, A.G.R. Evans, X. Li, J. Zhang, D.J. Norris, A.G. Cullis
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Volume:
8
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.mssp.2004.09.106
File:
PDF, 343 KB
english, 2005
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