Volume 8; Issue 1-3

14

The characteristic of HfO2 on strained SiGe

Year:
2005
Language:
english
File:
PDF, 307 KB
english, 2005
26

A DC–10 GHz amplifier with digital offset correction

Year:
2005
Language:
english
File:
PDF, 353 KB
english, 2005
38

Obituary

Year:
2005
File:
PDF, 118 KB
2005
39

Preface

Year:
2005
Language:
english
File:
PDF, 143 KB
english, 2005
51

Noise behavior of SiGe n-MODFETS

Year:
2005
Language:
english
File:
PDF, 509 KB
english, 2005
54

Resonance phase operation of a SiGe HBT

Year:
2005
Language:
english
File:
PDF, 263 KB
english, 2005
55

Properties and applications of SiGe nanodots

Year:
2005
Language:
english
File:
PDF, 530 KB
english, 2005
68

Application of plasma oxidation to strained-Si/SiGe MOSFET

Year:
2005
Language:
english
File:
PDF, 641 KB
english, 2005
70

Lateral scaling challenges for SiGe NPN BiCMOS process integration

Year:
2005
Language:
english
File:
PDF, 252 KB
english, 2005
83

Contents pages

Year:
2005
Language:
english
File:
PDF, 182 KB
english, 2005