Postbreakdown Current in MOS Structures: Extraction of...

IEEE Transactions on Device and Materials Reliability 2006 / 06 Vol. 6; Iss. 2

Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

Miranda, E., Ortiz-Conde, A., Garcia-Sanchez, F.J., Farkas-Sosa, E.
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Volume:
6
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2006.876563
Date:
June, 2006
File:
PDF, 308 KB
english, 2006
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