Volume 6; Issue 2

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IEEE Transactions on Device and Materials Reliability
Volume 6; Issue 2

IEEE Transactions on Device and Materials Reliability

Volume 6; Issue 2

1

SRAM Circuit-Failure Modeling and Reliability Simulation With SPICE

Li, X., Qin, J., Huang, B., Zhang, X., Bernstein, J.B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1006 KB

english, 2006

2

A New SPICE Reliability Simulation Method for Deep Submicrometer CMOS VLSI Circuits

Li, X., Qin, J., Huang, B., Zhang, X., Bernstein, J.B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 385 KB

english, 2006

3

Challenges in Barrier and Seed Layers Characterization of Cu Technology IC Devices

Li, K., Er, E., Yeow, T., Tang, D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 472 KB

english, 2006

4

Flash Memory Electromagnetic Compatibility

Fogle, A.D., Darling, D., Blish, R.C., Daszko, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1.57 MB

english, 2006

5

Electronic System Reliability: Collating Prediction Models

Goel, A., Graves, R.J.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 152 KB

english, 2006

6

Stacked Dual-Oxide MOS Energy Band Diagram Visual Representation Program (IRW Student Paper)

Southwick, R.G., Knowlton, W.B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 825 KB

english, 2006

7

Enhanced Breakdown Voltage, Diminished Quasi-Saturation, and Self-Heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliability: A TCAD Simulation Study

Roy, S.D., Kumar, M.J.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 732 KB

english, 2006

8

Moisture Influence on Porous Low-$k$Reliability

J. Michelon, R. Hoofman

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 356 KB

english, 2006

9

Improvement of Aging Simulation of Electronic Circuits Using Behavioral Modeling

F. Marc, B. Mongellaz, C. Bestory, H. Levi, Y. Danto

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 541 KB

english, 2006

10

Introduction to the Special Issue on the IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits

C. Tung, J. Chin, S. Lim

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 22 KB

english, 2006

11

Application of Conductive AFM on the Electrical Characterization of Single-Bit Marginal Failure

M. Bailon, P. Salinas, J. Arboleda

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 336 KB

english, 2006

12

Stress Migration Lifetime for Cu Interconnects With CoWP-Only Cap

Gambino, J.P., Johnson, C.L., Therrien, J.E., Hunt, D.B., Wynne, J.E., Smith, S., Mongeon, S.A., Pokrinchak, D.P., Levin, T.M.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 922 KB

english, 2006

13

Transmission EELS Attachment for SEM

T. Luo, A. Khursheed

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

14

A New Degradation Mode for Heterojunction Bipolar Transistors Under Reverse-Bias Stress

Ruat, M., Angers, R., Pakfar, A., Ghibaudo, G., Chantre, A., Revil, N., Pananakakis, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1.36 MB

english, 2006

15

Surface Electrostatic Damage by Microprocess Robotic Machines: Diagnosis and Reliability, Process Auditing, and Remedies

Jacob, P., Nicoletti, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 869 KB

english, 2006

16

Imaging and Dopant Profiling of Silicon Carbide Devices by Secondary Electron Dopant Contrast

Buzzo, M., Ciappa, M., Fichtner, W.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1002 KB

english, 2006

17

Enhanced$hboxSiO_2$Reliability on Deuterium-Implanted Silicon

Kundu, T., Misra, D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

18

Via-Depletion Electromigration in Copper Interconnects

Christiansen, C.J., Li, B., Gill, J., Filippi, R., Angyal, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 466 KB

english, 2006

19

Safe Operating Area of GaAs MESFET for Nonlinear Applications

Malbert, N., Labat, N., Ismail, N., Touboul, A., Muraro, J.-L., Brasseau, F., Langrez, D.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 349 KB

english, 2006

20

Observations of NBTI-Induced Atomic-Scale Defects

Campbell, J.P., Lenahan, P.M., Krishnan, A.T., Krishnan, S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 185 KB

english, 2006

21

ESD Protection for SOI Technology Using Under-the-BOX (Substrate) Diode Structure

Salman, A.A., Pelella, M.M., Beebe, S.G., Subba, N.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 1.55 MB

english, 2006

22

Design for ASIC Reliability for Low-Temperature Applications

Chen, Y., Westergard, L., Mojarradi, M.M., Johnson, T.W., Cozy, R.S., Billman, C., Burke, G.R., Kolawa, E.A.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

23

Stress-Induced Electromigration Backflow Effect in Copper Interconnects

Ney, D., Federspiel, X., Girault, V., Thomas, O., Gergaud, P.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 319 KB

english, 2006

24

Polarity-Dependent Device Degradation in SONOS Transistors Due to Gate Conduction Under Nonvolatile Memory Operations

Yi, J.-H., Shin, H., Park, Y.-J., Min, H.S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 787 KB

english, 2006

25

Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

Miranda, E., Ortiz-Conde, A., Garcia-Sanchez, F.J., Farkas-Sosa, E.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

26

Introduction to the Special Issue on the 2005 International Integrated Reliability Workshop

Conley, J.F., Chen, Y., Knowlton, B., Sullivan, T., Tonti, B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 39 KB

english, 2006

27

Visualization of Progressive Breakdown Evolution in Gate Dielectric by Conductive Atomic Force Microscopy

Zhang, L., Mitani, Y., Satake, H.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 631 KB

english, 2006

28

Origin of Vt Instabilities in High-$k$Dielectrics Jahn–Teller Effect or Oxygen Vacancies

Ribes, G., Bruyere, S., Roy, D., Parthasarthy, C., Muller, M., Denais, M., Huard, V., Skotnicki, T., Ghibaudo, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 500 KB

english, 2006

29

Linking Corrosion and Catastrophic Failure in Low-Power Metallized Polypropylene Capacitors

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 658 KB

english, 2006

30

Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays: A Comprehensive Study

Orouji, A.A., Kumar, M.J.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 924 KB

english, 2006

31

Thermal Runaway in Integrated Circuits

Vassighi, A., Sachdev, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 237 KB

english, 2006