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Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition
K.K.S. Curreem, P.F. Lee, J.Y. DaiVolume:
9
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2006.10.040
File:
PDF, 580 KB
english, 2006