Volume 9; Issue 6

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Materials Science in Semiconductor Processing
Volume 9; Issue 6

Materials Science in Semiconductor Processing

Volume 9; Issue 6

1

Preface

J. Dabrowski, P.K. Hurley, J. Murota, E.R. Weber

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 80 KB

english, 2006

2

Structural and interfacial properties of high-k HfOxNy gate dielectric films

G. He, Q. Fang, L.D. Zhang

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

3

Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures

M. Liu, Q. Fang, G. He, L.Q. Zhu, S.S. Pan, L.D. Zhang

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 163 KB

english, 2006

4

Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 132 KB

english, 2006

5

EPR characterization of defects in monoclinic powders of ZrO2 and HfO2

Sandra Wright, R.C. Barklie

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 231 KB

english, 2006

6

Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86 nm

H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, M.C. Lemme, H. Kurz

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 235 KB

english, 2006

7

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

M.K. Bera, C.K. Maiti

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 756 KB

english, 2006

8

Relaxation of defects in amorphous barium titanate thin films

F. El Kamel, P. Gonon, B. Yangui

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

9

Modeling the silicon–hafnia interface

R.M. Nieminen, M.H. Hakala, A.S. Foster

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 515 KB

english, 2006

10

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Zengfeng Di, Miao Zhang, Weili Liu, Qinwo Shen, Zhitang Song, Chenglu Lin, Anping Huang, Paul K. Chu

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 455 KB

english, 2006

11

Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric

M. Ťapajna, K. Hušeková, J.P. Espinos, L. Harmatha, K. Fröhlich

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

12

The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

T. Nabatame, K Segawa, M. Kadoshima, H. Takaba, K. Iwamoto, S. Kimura, Y. Nunoshige, H. Satake, T. Ohishi, Akira Toriumi

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 276 KB

english, 2006

13

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Y. Gomeniuk, A. Nazarov, Ya. Vovk, Yi Lu, O. Buiu, S. Hall, J.K. Efavi, M.C. Lemme

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 178 KB

english, 2006

14

Behaviour of injected electrons in high-k dielectric layers

R. Avichail-Bibi, A. Kiv, T. Maximova, Y. Roizin, D. Fuks

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 149 KB

english, 2006

15

Carrier transport and related phenomena in MOS devices

A. Bouazra, S. Abdi-Ben Nasrallah, A. Poncet, M. Said

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

16

Characterization of ALD-deposited Al oxide films for high-k purposes: A chemical investigation

S.G. Alberici, A. Giussani

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 509 KB

english, 2006

17

Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios

M. Toledano-Luque, E. San Andrés, J. Olea, A. del Prado, I. Mártil, W. Bohne, J. Röhrich, E. Strub

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 240 KB

english, 2006

18

Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering

L.Q. Zhu, Q. Fang, G. He, M. Liu, X.X. Xu, L.D. Zhang

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

19

Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

Youhei Sugimoto, Hideto Adachi, Keisuke Yamamoto, Dong Wang, Hideharu Nakashima, Hiroshi Nakashima

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 262 KB

english, 2006

20

XRD and EXAFS studies of crystallisation in films

N.D. Afify, G. Dalba, U. Mahendra Kumar Koppolu, C. Armellini, Y. Jestin, F. Rocca

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 282 KB

english, 2006

21

Structure analysis of the system Hafnium/Silicon by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD)

C.R. Flüchter, A. de Siervo, D. Weier, M. Schürmann, U. Berges, S. Dreiner, M.F. Carazzolle, R. Landers, G.G. Kleiman, C. Westphal

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 539 KB

english, 2006

22

Photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) studies on the system hafnium silicide and hafnium oxide on Si(1 0 0)

D. Weier, C. Flüchter, A. de Siervo, M. Schürmann, S. Dreiner, U. Berges, M.F. Carazzolle, A. Pancotti, R. Landers, G.G. Kleiman, C. Westphal

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 473 KB

english, 2006

23

Electrical and structural characterization of PLD grown CeO2–HfO2 laminated high-k gate dielectrics

K. Karakaya, B. Barcones, Z.M. Rittersma, J.G.M. van Berkum, M.A. Verheijen, G. Rijnders, D.H.A. Blank

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 450 KB

english, 2006

24

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

K. Frohlich, R. Luptak, E. Dobrocka, K. Husekova, K. Cico, A. Rosova, M. Lukosius, A. Abrutis, P. Pisecny, J.P. Espinos

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 478 KB

english, 2006

25

Praseodymium based high-k dielectrics grown on Si and SiC substrates

Raffaella Lo Nigro, Roberta G. Toro, Graziella Malandrino, Ignazio L. Fragalà, Vito Raineri, Patrick Fiorenza

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 399 KB

english, 2006

26

Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide

Indrek Jõgi, Kaupo Kukli, Jaan Aarik, Aleks Aidla, Jun Lu

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 558 KB

english, 2006

27

ZrAlO ternary oxide as a candidate for high-k dielectrics

M. Bizarro, J.C. Alonso, A. Ortiz

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

28

Novel high-K inverse silver oxide phases of , , , and their alloys

C. Sevik, C. Bulutay

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 440 KB

english, 2006

29

Structural, electrical and optical properties of GZO/HfO2/GZO transparent MIM capacitors

Byung Du Ahn, Jong Hoon Kim, Hong Seong Kang, Choong Hee Lee, Sang Hoon Oh, Gun Hee Kim, Dong Hua Li, Sang Yeol Lee

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

30

Low temperature processed hafnium oxide: Structural and electrical properties

L. Pereira, P. Barquinha, E. Fortunato, R. Martins

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 236 KB

english, 2006

31

High temperature characterization of high-κ dielectrics on SiC

M.H. Weng, R. Mahapatra, P. Tappin, B. Miao, S. Chattopadhyay, A.B. Horsfall, N.G. Wright

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 161 KB

english, 2006

32

Structural and electronic properties of zirconia phases: A FP-LAPW investigations

R. Terki, G. Bertrand, H. Aourag, C. Coddet

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 621 KB

english, 2006

33

Etch damage evaluation on (Bi4−xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources

Jong-Gyu Kim, Gwan-Ha Kim, Kyoung-Tae Kim, Chang-Il Kim

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 632 KB

english, 2006

34

Monte carlo study of mobility in Si devices with -based oxides

Giulio Ferrari, J.R. Watling, S. Roy, J.R. Barker, P. Zeitzoff, G. Bersuker, A. Asenov

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 168 KB

english, 2006

35

Structural and vibrational properties of high-dielectric oxides, HfO2 and TiO2: A comparative study

A. Debernardi, M. Fanciulli

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 179 KB

english, 2006

36

Investigation of strontium tantalate thin films for high-k gate dielectric applications

M. Silinskas, M. Lisker, B. Kalkofen, E.P. Burte

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 456 KB

english, 2006

37

Optimization of electric properties of high-k zirconium dioxide by varying deposition and annealing conditions

M. Silinskas, M. Lisker, S. Matichyn, B. Kalkofen, E.P. Burte

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 368 KB

english, 2006

38

Work function control at metal–oxide interfaces in CMOS

K. Tse, J. Robertson

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 827 KB

english, 2006

39

Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

K.K.S. Curreem, P.F. Lee, J.Y. Dai

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 580 KB

english, 2006

40

Investigation of electrically active defects in amorphous barium titanate thin films

F. El Kamel, P. Gonon

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 306 KB

english, 2006

41

Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy

P. Muret, L. Auvray, O. Salicio, C. Dubourdieu

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

42

Interfaces between - and silicon

P. Boulenc, I. Devos

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 410 KB

english, 2006

43

Photoemission (XPS and XPD) study of epitaxial LaAlO3 film grown on SrTiO3(0 0 1)

M. El Kazzi, C. Merckling, G. Delhaye, L. Arzel, G. Grenet, E. Bergignat, G. Hollinger

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 487 KB

english, 2006

44

Growth of epitaxial Pr2O3 layers on Si(1 1 1)

N.M. Jeutter, M. Hennemeyer, R. Stark, A. Stierle, W. Moritz

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 1.34 MB

english, 2006

45

Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(0 0 1) surfaces

D. Schmeißer, E. Zschech

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 215 KB

english, 2006

46

Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces

Rakesh Sohal, Mohamed Torche, Karsten Henkel, Patrick Hoffmann, Massimo Tallarida, Dieter Schmeißer

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

47

Impact of defects on the high-κ/MG stack: The electrical characterization challenge

Luigi Pantisano, L.-Å. Ragnarsson, M. Houssa, R. Degraeve, G. Groeseneken, T. Schram, S. Degendt, M. Heyns, V. Afanas’ev, A. Stesmans

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 181 KB

english, 2006

48

Ab initio study of point defects in dielectrics based on Pr oxides

J. Da¸browski, A. Fleszar, G. Łupina, Ch. Wenger

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 473 KB

english, 2006

49

Performance improvement of CMOS device utilizing poly-Si/HfSiON gate stack and its reliability concern for 65 nm technology and beyond

N. Kimizuka, Y. Yasuda, T. Abe, S. Fujieda, T. Iwamoto, I. Yamamoto, K. Takano, Y. Akiyama, K. Tsuneki, K. Imai

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 716 KB

english, 2006

50

Influence of polarization electric field on the dielectric properties of BaTiO3-based ceramics

M.T. Benlahrache, S.E. Barama, N. Benhamla, S. Achour

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 173 KB

english, 2006

51

Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient

Kyungsoo Jang, Kwangsoo Lee, Junsik Kim, Sunghyun Hwang, Jeongin Lee, Suresh Kumar Dhungel, Sungwook Jung, Junsin Yi

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 488 KB

english, 2006

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