An integratable dual metal gate CMOS process using an...

IEEE Electron Device Letters 2003 / 05 Vol. 24; Iss. 5

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Chang Seo Park,, Byung Jin Cho,, Dim-Lee Kwong,
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.812548
Date:
May, 2003
File:
PDF, 221 KB
english, 2003
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