High performance 0.1 /spl mu/m dynamic threshold MOSFET...

IEEE Electron Device Letters 2000 / 03 Vol. 21; Iss. 3

High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation

Sun-Jay Chang,, Chun-Yen Chang,, Tien-Sheng Chao,, Tiao-Yuan Huang,
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.823577
Date:
March, 2000
File:
PDF, 63 KB
english, 2000
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