Volume 21; Issue 3

IEEE Electron Device Letters

Volume 21; Issue 3

1

Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBTs

Shen, Z.J., Briggs, D., Robb, S.P.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 60 KB

english, 2000

2

1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process

Wu, Y., Lee, Y.-M., Lucovsky, G.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 66 KB

english, 2000

3

A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization

Won Kyu Kwak,, Bong Rae Cho,, Soo Young Yoon,, Seong Jin Park,, Jin Jang,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 195 KB

english, 2000

4

An amorphous silicon thin-film transistor with fully self-aligned top gate structure

Powell, M.J., Glasse, C., Green, P.W., French, I.D., Stemp, I.J.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 97 KB

english, 2000

5

0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

Chertouk, M., Dammann, M., Kohler, K., Weimann, G.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

6

High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation

Sun-Jay Chang,, Chun-Yen Chang,, Tien-Sheng Chao,, Tiao-Yuan Huang,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

7

A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique [MOSFETs]

Yu-Lin Chu,, Ching-Yuan Wu,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 79 KB

english, 2000

8

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

Jeffrey Mun Pun Yue,, Wai Kin Chim,, Byung Jin Cho,, Daniel Sin Hung Chan,, Wei Han Qin,, Young-Bog Kim,, Se-Aug Jang,, In-Seok Yeo,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 49 KB

english, 2000

9

Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants

van Meer, H., Henson, K., Lyu, J.-H., Rosmeulen, M., Kubicek, S., Collaert, N., De Meyer, K.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 128 KB

english, 2000

10

Microwave characteristics of a pseudomorphic high electron mobility transistor under electro-optical stimulations

Kim, D.M., Song, S.H., Baek, K.H., Kim, D.J., Kim, H.J.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

11

Organic smart pixels and complementary inverter circuits formed on plastic substrates by casting and rubber stamping

Rogers, J.A., Bao, Z., Dodabalapur, A., Makhija, A.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 109 KB

english, 2000

12

Gate oxide integrity of thermal oxide grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/

Wu, Y.H., Chin, A.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 109 KB

english, 2000

13

Extremely high transconductance Ge/Si/sub 0.4/Ge/sub 0.6/ p-MODFET's grown by UHV-CVD

Koester, S.J., Hammond, R., Chu, J.O.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 88 KB

english, 2000