Characteristics of GaAs heterojunction FETs (HFETs) and...

IEEE Transactions on Nuclear Science 1989 / Dec. Vol. 36; Iss. 6

Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons

Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.45428
Date:
January, 1989
File:
PDF, 425 KB
english, 1989
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