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Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
Kwang-Ho Kim,, Jin-Ping Han,, Soon-Won Jung,, Tso-Ping Ma,Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.981313
Date:
February, 2002
File:
PDF, 53 KB
english, 2002