Volume 23; Issue 2

IEEE Electron Device Letters

Volume 23; Issue 2

1

Current transport in metal/hafnium oxide/silicon structure

Zhu, W.J., Tso-Ping Ma,, Tamagawa, T., Kim, J., Di, Y.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 66 KB

english, 2002

2

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Moran, B., Heikman, S., Zhang, N.Q., Shen, L., Coffie, R., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

3

A capacitor-less 1T-DRAM cell

Okhonin, S., Nagoga, M., Sallese, J.M., Fazan, P.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 70 KB

english, 2002

4

Sub-40 nm SOI V-groove n-MOSFETs

Appenzeller, J., Martel, R., Avouris, Ph., Knoch, J., Scholvin, J., del Alamo, J.A., Rice, P., Solomon, P.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 215 KB

english, 2002

5

Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure

Kwang-Ho Kim,, Jin-Ping Han,, Soon-Won Jung,, Tso-Ping Ma,

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 53 KB

english, 2002

6

The injection efficiency controlled IGBT

Huang, S., Amaratunga, G.A.J., Udrea, F.

Journal:

IEEE Electron Device Letters

Year:

2002

File:

PDF, 313 KB

2002

7

Three level charge pumping on a single interface trap

Militaru, L., Masson, P., Guegan, G.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 63 KB

english, 2002

8

Positive flatband voltage shift in MOS capacitors on n-type GaN

Matocha, K., Chow, T.P., Gutmann, R.J.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 53 KB

english, 2002

9

Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrate

De Roest, D., Ymeri, H., Vandenberghe, S., Stucchi, M., Schreurs, D., Maex, K., Nauwelaers, B.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 62 KB

english, 2002

10

0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer

Bollaert, S., Wallaert, X., Lepilliet, S., Cappy, A., Jalaguier, E., Pocas, S., Aspar, B.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 71 KB

english, 2002

11

Super low noise InGaP gated PHEMT

Huang, H.K., Wang, Y.H., Wu, C.L., Wang, C., Chang, C.S.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 74 KB

english, 2002

12

Correction to "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency"

Shinohara, K., Yamashita, Y., Endoh, A., Hikosaka, K., Matsui, T., Mimura, T., Hiyamizu, S.

Journal:

IEEE Electron Device Letters

Year:

2002

File:

PDF, 16 KB

2002

13

JVD silicon nitride as tunnel dielectric in p-channel flash memory

Min She,, Tsu-Jae King,, Chenming Hu,, Wenjuan Zhu,, Zhijiong Luo,, Jin-Ping Han,, Tso-Ping Ma,

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 44 KB

english, 2002