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Volume 23; Issue 2
Main
IEEE Electron Device Letters
Volume 23; Issue 2
IEEE Electron Device Letters
Volume 23; Issue 2
1
Current transport in metal/hafnium oxide/silicon structure
Zhu, W.J.
,
Tso-Ping Ma,
,
Tamagawa, T.
,
Kim, J.
,
Di, Y.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2002
2
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
Buttari, D.
,
Chini, A.
,
Meneghesso, G.
,
Zanoni, E.
,
Moran, B.
,
Heikman, S.
,
Zhang, N.Q.
,
Shen, L.
,
Coffie, R.
,
DenBaars, S.P.
,
Mishra, U.K.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 64 KB
Your tags:
english, 2002
3
A capacitor-less 1T-DRAM cell
Okhonin, S.
,
Nagoga, M.
,
Sallese, J.M.
,
Fazan, P.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 70 KB
Your tags:
english, 2002
4
Sub-40 nm SOI V-groove n-MOSFETs
Appenzeller, J.
,
Martel, R.
,
Avouris, Ph.
,
Knoch, J.
,
Scholvin, J.
,
del Alamo, J.A.
,
Rice, P.
,
Solomon, P.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 215 KB
Your tags:
english, 2002
5
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
Kwang-Ho Kim,
,
Jin-Ping Han,
,
Soon-Won Jung,
,
Tso-Ping Ma,
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 53 KB
Your tags:
english, 2002
6
The injection efficiency controlled IGBT
Huang, S.
,
Amaratunga, G.A.J.
,
Udrea, F.
Journal:
IEEE Electron Device Letters
Year:
2002
File:
PDF, 313 KB
Your tags:
2002
7
Three level charge pumping on a single interface trap
Militaru, L.
,
Masson, P.
,
Guegan, G.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 63 KB
Your tags:
english, 2002
8
Positive flatband voltage shift in MOS capacitors on n-type GaN
Matocha, K.
,
Chow, T.P.
,
Gutmann, R.J.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 53 KB
Your tags:
english, 2002
9
Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrate
De Roest, D.
,
Ymeri, H.
,
Vandenberghe, S.
,
Stucchi, M.
,
Schreurs, D.
,
Maex, K.
,
Nauwelaers, B.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 62 KB
Your tags:
english, 2002
10
0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
Bollaert, S.
,
Wallaert, X.
,
Lepilliet, S.
,
Cappy, A.
,
Jalaguier, E.
,
Pocas, S.
,
Aspar, B.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 71 KB
Your tags:
english, 2002
11
Super low noise InGaP gated PHEMT
Huang, H.K.
,
Wang, Y.H.
,
Wu, C.L.
,
Wang, C.
,
Chang, C.S.
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 74 KB
Your tags:
english, 2002
12
Correction to "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency"
Shinohara, K.
,
Yamashita, Y.
,
Endoh, A.
,
Hikosaka, K.
,
Matsui, T.
,
Mimura, T.
,
Hiyamizu, S.
Journal:
IEEE Electron Device Letters
Year:
2002
File:
PDF, 16 KB
Your tags:
2002
13
JVD silicon nitride as tunnel dielectric in p-channel flash memory
Min She,
,
Tsu-Jae King,
,
Chenming Hu,
,
Wenjuan Zhu,
,
Zhijiong Luo,
,
Jin-Ping Han,
,
Tso-Ping Ma,
Journal:
IEEE Electron Device Letters
Year:
2002
Language:
english
File:
PDF, 44 KB
Your tags:
english, 2002
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