Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG...

Semiconductor Science and Technology 2008 / 07 Vol. 23; Iss. 7

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H
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Volume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/7/075048
Date:
July, 2008
File:
PDF, 162 KB
english, 2008
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