Volume 23; Issue 7

Semiconductor Science and Technology

Volume 23; Issue 7

1

Wavelength-stabilized tilted wave lasers with a narrow vertical beam divergence

Novikov, I I, Shernyakov, Yu M, Maximov, M V, Gordeev, N Yu, Kaluzhniy, N A, Mintairov, S A, Lantratov, V M, Payusov, A S, Shchukin, V A, Ledentsov, N N

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 413 KB

english, 2008

2

Gunn oscillations in planar heterostructure diodes

Pilgrim, N J, Khalid, A, Dunn, G M, Cumming, D R S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 3.07 MB

english, 2008

3

A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm

Casalino, M, Sirleto, L, Moretti, L, Rendina, I

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 306 KB

english, 2008

4

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

Xu, N, Liu, L F, Sun, X, Chen, C, Wang, Y, Han, D D, Liu, X Y, Han, R Q, Kang, J F, Yu, B

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 436 KB

english, 2008

5

Emission dynamics of InAs self-assembled quantum dots with different cap layer structures

Kong, Ling Min, Feng, Zhe Chuan, Wu, Zheng Yun, Lu, Weijie

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 277 KB

english, 2008

6

Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

Guillén, C, Herrero, J

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 553 KB

english, 2008

7

FinFET reliability study by forward gated-diode generation–recombination current

Ma, Chenyue, Li, Bo, Wei, Yiqun, Zhang, Lining, He, Jin, Zhang, Xing, Lin, Xinnan, Chan, Mansun

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 466 KB

english, 2008

8

Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectors

Kosyachenko, L A, Maslyanchuk, O L, Gnatyuk, V A, Lambropoulos, C, Rarenko, I M, Sklyarchuk, V M, Sklyarchuk, O F, Zakharuk, Z I

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 267 KB

english, 2008

9

Schottky diodes on ZnO rods grown homoepitaxially by successive chemical solution deposition

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 609 KB

english, 2008

10

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

Wang, Lei, Wang, Jun, Li, Rui, Lee, Poo, Hu, Jian, Qu, Will, Li, Wenjun, Yang, Steve

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

11

Tight-binding description of patterned graphene

Gharekhanlou, Behnaz, Alavi, Marjan, Khorasani, Sina

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 757 KB

english, 2008

12

Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

Ismail, Raid A, Al-Naimi, Ala, Al-Ani, Alaa A

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 214 KB

english, 2008

13

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 162 KB

english, 2008

14

Highly doped p-type 3C–SiC on 6H–SiC substrates

Lebedev, A A, Abramov, P L, Bogdanova, E V, Lebedev, S P, Nel'son, D K, Oganesyan, G A, Tregubova, A S, Yakimova, R

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 291 KB

english, 2008

15

Metal contact, resistivity and Hall measurement studies of a quasi monocrystalline porous silicon layer vis-à-vis porous silicon

Banerjee, M, Basu, S, Saha, H

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 346 KB

english, 2008

16

Temperature dependence of current–voltage characteristics of an In/p-GaSe:Gd/Au–Sb Schottky barrier diode

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 230 KB

english, 2008

17

Properties of the ubiquitous p–n junction in semiconductor nanowires

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 257 KB

english, 2008

18

6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

Rashmi,, Kranti, Abhinav, Armstrong, G Alastair

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 345 KB

english, 2008

19

Gold-enhanced oxidation of MBE-grown silicon nanowires

Büttner, C C, Zakharov, N D, Pippel, E, Gösele, U, Werner, P

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 510 KB

english, 2008

20

Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETs

Sharma, Rupendra Kumar, Gupta, Ritesh, Gupta, Mridula, Gupta, R S

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 385 KB

english, 2008

21

Process induced sub-surface damage in mechanically ground silicon wafers

Yang, Yu, De Munck, Koen, Teixeira, Ricardo Cotrin, Swinnen, Bart, Verlinden, Bert, De Wolf, Ingrid

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1.41 MB

english, 2008

22

Studies of mist deposition in the fabrication of blue organic light emitting diodes

Shanmugasundaram, K, Price, S C, Li, W, Jiang, H, Huang, J, Wang, Q K, Yang, Y, Ruzyllo, J

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 203 KB

english, 2008

23

Fabrication and electrical properties of Al/Safranin T/n-Si/AuSb structure

Güllü, Ö, Aydoğan, Ş, Türüt, A

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 170 KB

english, 2008

24

Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier

Golubović, D S, Vianello, E, Arreghini, A, Driussi, F, van Duuren, M J, Akil, N, Selmi, L, Esseni, D

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 247 KB

english, 2008

25

A monolithic (Si) massively broadband non-reverberant monopole

Vilches, Antonio, Michelakis, Kostis, Hand, Jeff, Toumazou, Chris

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 1001 KB

english, 2008

26

Investigation on gold and aluminum contacts for Cd 0.8 Mn 0.2 Te crystals

Zhang, Jijun, Jie, Wanqi, Hao, Yunxiao, Wang, Xiaoqin

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 439 KB

english, 2008

27

Stress-induced voiding study in integrated circuit interconnects

Hou, Yuejin, Tan, Cher Ming

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 652 KB

english, 2008

28

Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

Lin, Jyi-Tsong, Huang, Kuo-Dong, Hu, Shu-Fen

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 683 KB

english, 2008

29

A comparative study on analog/RF performance of UTB GOI and SOI devices

Zhuge, Jing, An, Xia, Huang, Ru, Xiao, Han, Hou, Xiaoyu, Wang, Runsheng, Wang, Yangyuan

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 210 KB

english, 2008

30

Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 µm wavelength light

Seong, Hojun, Cho, Kyoungah, Kim, Sangsig

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 561 KB

english, 2008

31

Constant voltage stress induced current in Ta 2 O 5 stacks and its dependence on a gate electrode

Atanassova, E, Stojadinovic, N, Paskaleva, A, Spassov, D, Vracar, L, Georgieva, M

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 257 KB

english, 2008

32

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

Ruan, X Z, Sun, B Q, Ji, Yang, Yang, W, Zhao, J H, Xu, Z Y

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 181 KB

english, 2008

33

A magnetoresistance device based on a magnetic-barrier nanostructure

Liu, Yu, Zhang, Lan-Lan

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 134 KB

english, 2008

34

Ion irradiation induced nitrogen mobility in a GaInNAs quantum well laser

Qiu, Y N, Papaioannou, G, Pozo, J, Rorison, J M, Saarinen, M, Konttinen, J, Viheriälä, J, Leinonen, P, Jouhti, T, Pessa, M

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

35

Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates

Sharma, T K, Dixit, V K, Ganguli, Tapas, Singh, S D, Porwal, S, Kumar, R, Tiwari, P, Nath, A K

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 378 KB

english, 2008

36

SONOS memories with embedded silicon nanocrystals in nitride

Liu, Mei-Chun, Chiang, Tsung-Yu, Kuo, Po-Yi, Chou, Ming-Hong, Wu, Yi-Hong, You, Hsin-Chiang, Cheng, Ching-Hwa, Liu, Sheng-Hsien, Yang, Wen-Luh, Lei, Tan-Fu, Chao, Tien-Sheng

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 580 KB

english, 2008

37

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Wu, Dake, Huang, Ru, Wang, Pengfei, Tang, Poren, Wang, Yangyuan

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 517 KB

english, 2008

38

On application of electrochemical capacitance–voltage profiling technique for n-type SiC

Mynbaeva, M, Kayambaki, M, Mynbaev, K, Zekentes, K

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 857 KB

english, 2008

39

Spectroscopic behavior of bioconjugated quantum dots

Chornokur, G, Ostapenko, S, Emirov, Yu, Korsunska, N E, Sellers, T, Phelan, C

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 456 KB

english, 2008

40

Optical anisotropy in (1 1 0)-oriented zinc-blende GaN/AlGaN quantum wells

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 212 KB

english, 2008

41

Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes

Masui, Hisashi, Fellows, Natalie N, Nakamura, Shuji, DenBaars, Steven P

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 280 KB

english, 2008

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