AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Lee, Jae-Hoon, Park, Chanho, Im, Ki-Sik, Lee, Jung-Hee
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2273271
Date:
October, 2013
File:
PDF, 1.57 MB
english, 2013
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