Evidence for the Fourfold-Valley Confinement Electron...

IEEE Electron Device Letters 2012 / 06 Vol. 33; Iss. 6

Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of $\langle \hbox{110}\rangle$ Uniaxial-Tensile-Strained (001) nMOSFETs

Chen, Ming-Jer, Lee, Wei-Han
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2190579
Date:
June, 2012
File:
PDF, 402 KB
english, 2012
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