Threshold Voltage Modulation Using $\hbox{N}_{2}^{+}$...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

Threshold Voltage Modulation Using $\hbox{N}_{2}^{+}$ Implantation Into Substrate for Ni Fully Silicided Gate/High-$k$ NMOS

Yamashita, T., Nishida, Y., Eikyu, K., Oda, H., Inoue, Y., Shibahara, K.
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2004416
Date:
October, 2008
File:
PDF, 140 KB
english, 2008
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