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Threshold Voltage Modulation Using $\hbox{N}_{2}^{+}$ Implantation Into Substrate for Ni Fully Silicided Gate/High-$k$ NMOS
Yamashita, T., Nishida, Y., Eikyu, K., Oda, H., Inoue, Y., Shibahara, K.Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2004416
Date:
October, 2008
File:
PDF, 140 KB
english, 2008