New Layout Arrangement to Improve ESD Robustness of...

IEEE Electron Device Letters 2010 / 02 Vol. 31; Iss. 2

New Layout Arrangement to Improve ESD Robustness of Large-Array High-Voltage nLDMOS

Wen-Yi Chen,, Ming-Dou Ker,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2037343
Date:
February, 2010
File:
PDF, 420 KB
english, 2010
Conversion to is in progress
Conversion to is failed