Extension of Planar Bulk n-Channel MOSFET Scaling With...

IEEE Transactions on Electron Devices 2014 / 9 Vol. 61; Iss. 9

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

Xu, Nuo, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Huang, Xiangyang, Cody, Nyles W., Hytha, Marek, Mears, Robert J., Liu, Tsu-Jae King
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2342496
Date:
September, 2014
File:
PDF, 1.99 MB
english, 2014
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