A Double-Spacer I-MOS Transistor With Shallow Source...

IEEE Electron Device Letters 2008 / 02 Vol. 29; Iss. 2

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance

Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.914100
Date:
February, 2008
File:
PDF, 358 KB
english, 2008
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