Volume 29; Issue 2

IEEE Electron Device Letters

Volume 29; Issue 2

1

Monolithic CMOS MEMS Oscillator Circuit for Sensing in the Attogram Range

Verd, J., Uranga, A., Abadal, G., Teva, J.L., Torres, F., Lopez, J.L., Perez-Murano, E., Esteve, J., Barniol, N.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 380 KB

english, 2008

2

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Tan, Kian-Ming, Zhu, Ming, Fang, Wei-Wei, Yang, Mingchu, Liow, Tsung-Yang, Lee, Rinus T. P., Hoe, Keat Mun, Tung, Chih-Hang, Balasubramanian, Narayanan, Samudra, Ganesh S., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 232 KB

english, 2008

3

Rotational Driven RF Variable Capacitors With Post-CMOS Processes

Gu, Lei, Li, Xinxin

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 326 KB

english, 2008

4

The Effects of Drain-Bias on the Threshold Voltage Instability in Organic TFTs

Zan, Hsiao-Wen, Kao, Shin-Chin

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 107 KB

english, 2008

5

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 220 KB

english, 2008

6

Augmented Cell Performance of NO-Based Storage Dielectric by N$_2$ O-Treated Nitride Film for Trench DRAM

Wu, Yung-Hsien, Chang, Chih-Ming, Wang, Chun-Yao, Kao, Chien-Kang, Kuo, Chia-Ming, Ku, Alex, Huang, Tensor

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 205 KB

english, 2008

7

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

Chen, Zhihong, Farmer, Damon, Xu, Sheng, Gordon, Roy, Avouris, Phaedon, Appenzeller, Joerg

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

8

Fabrication and Performance of 0.25-$\mu$m Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric

Zhang, Jing, Kosel, Thomas H., Hall, Douglas C., Fay, Patrick

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 133 KB

english, 2008

9

High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

Shi, J.-W., Sheu, J.-K., Chen, C.-H., Lin, G.-R., Lai, W.-C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 188 KB

english, 2008

10

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance

Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 358 KB

english, 2008

11

Dielectrics Subjected to PBTI Stress

Heh, Dawei, Young, Chadwin D., Bersuker, Gennadi

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 224 KB

english, 2008

12

Analysis of Negative Bias Temperature Instability in Body-Tied Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Chen, Chih-Yang, Ma, Ming-Wen, Chen, Wei-Cheng, Lin, Hsiao-Yi, Yeh, Kuan-Lin, Wang, Shen-De, Lei, Tan-Fu

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 527 KB

english, 2008

13

Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

Zang, H., Lee, S. J., Loh, W. Y., Wang, J., Chua, K. T., Yu, M. B., Cho, B. J., Lo, G. Q., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 322 KB

english, 2008

14

The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

Lee, Won-Kyu, Park, Joong-Hyun, Choi, Joonhoo, Han, Min-Koo

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 194 KB

english, 2008

15

Integration of PtSi in p-Type MOSFETs Using a Sacrificial Low-Temperature Germanidation Process

Breil, N., Dubois, E., Halimaoui, A., Pouydebasque, A., Laszcz, A., Ratajcak, J., Larrieu, G., Skotnicki, T.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 331 KB

english, 2008

16

Characteristics of PBTI and Hot Carrier Stress for LTPS-TFT With High-$\kappa$ Gate Dielectric

Ma, Ming-Wen, Chen, Chih-Yang, Su, Chun-Jung, Wu, Woei-Cherng, Wu, Yi-Hong, Kao, Kuo-Hsing, Chao, Tien-Sheng, Lei, Tan-Fu

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 378 KB

english, 2008

17

Impacts of Fluorine Ion Implantation With Low-Temperature Solid-Phase Crystallized Activation on High- $\kappa$ LTPS-TFT

Ma, Ming-Wen, Chen, Chih-Yang, Su, Chun-Jung, Wu, Woei-Cherng, Wu, Yi-Hong, Yang, Tsung-Yu, Kao, Kuo-Hsing, Chao, Tien-Sheng, Lei, Tan-Fu

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 318 KB

english, 2008

18

On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

Govoreanu, Bogdan, Van Houdt, Jan

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 152 KB

english, 2008

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