Random Telegraph Noise Effect on the Programmed...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

Compagnoni, C.M., Ghidotti, M., Lacaita, A.L., Spinelli, A.S., Visconti, A.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2026658
Date:
September, 2009
File:
PDF, 118 KB
english, 2009
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