Highly doped p-type 3C–SiC on 6H–SiC substrates

Semiconductor Science and Technology 2008 / 07 Vol. 23; Iss. 7

Highly doped p-type 3C–SiC on 6H–SiC substrates

Lebedev, A A, Abramov, P L, Bogdanova, E V, Lebedev, S P, Nel'son, D K, Oganesyan, G A, Tregubova, A S, Yakimova, R
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/7/075004
Date:
July, 2008
File:
PDF, 291 KB
english, 2008
Conversion to is in progress
Conversion to is failed