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Highly doped p-type 3C–SiC on 6H–SiC substrates
Lebedev, A A, Abramov, P L, Bogdanova, E V, Lebedev, S P, Nel'son, D K, Oganesyan, G A, Tregubova, A S, Yakimova, RVolume:
23
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/23/7/075004
Date:
July, 2008
File:
PDF, 291 KB
english, 2008